Uniform and Repeatable Cold-Wall Chemical Vapor Deposition Synthesis of Single-Layer MoS2

Chad Lunceford, Emanuel Borcean, Jeffery Drucker

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A cold-wall chemical vapor deposition method for growing MoS2 that allows independent control over all deposition parameters is described. Ar carrier gas flow rate and pressure, substrate temperature, and the temperatures of the individual solid-source precursors can all be independently varied during growth onto 100-nm-thick SiO2 films on Si substrates. Individually optimizing each deposition parameter enables formation of islanded, single-layer MoS2 films with excellent run-to-run repeatability in coverage and uniformity over several square millimeter areas. Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry were used to quantify the elemental composition of the films. Film morphology was analyzed using scanning electron microscopy (SEM). This analysis indicates that excess Mo deposits on the SiO2 substrate without incorporating into the stoichiometric single-layer MoS2 clusters imaged by SEM. In addition, the amount of S detected using AES is nearly identical to the amount required to form the MoS2 islands.

Original languageEnglish (US)
Pages (from-to)988-995
Number of pages8
JournalCrystal Growth and Design
Volume16
Issue number2
DOIs
StatePublished - Feb 3 2016

Fingerprint

cold walls
Chemical vapor deposition
vapor deposition
Auger electron spectroscopy
Auger spectroscopy
electron spectroscopy
Substrates
synthesis
Scanning electron microscopy
scanning electron microscopy
Rutherford backscattering spectroscopy
Thick films
Spectrometry
thick films
gas flow
Flow of gases
backscattering
Deposits
flow velocity
deposits

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Uniform and Repeatable Cold-Wall Chemical Vapor Deposition Synthesis of Single-Layer MoS2 . / Lunceford, Chad; Borcean, Emanuel; Drucker, Jeffery.

In: Crystal Growth and Design, Vol. 16, No. 2, 03.02.2016, p. 988-995.

Research output: Contribution to journalArticle

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