TY - JOUR
T1 - Understanding ion-milling damage in Hg 1-xCd xTe epilayers
AU - Wang, Changzhen
AU - Smith, David
AU - Tobin, Steve
AU - Parodos, Themis
AU - Zhao, Jun
AU - Chang, Yong
AU - Sivananthan, Sivalingam
N1 - Funding Information:
This work has been supported by the DoD Multidisciplinary University Research Initiative (MURI) program administered by the Army Research Office under Grant No. DAAD-19-01-1-0462, monitored by Dr. W. Clark. The authors acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2006/7
Y1 - 2006/7
N2 - Transmission electron microscopy (TEM) is widely used for the characterization of the microstructure of Hg1-x Cdx Te epilayers. Traditional TEM sample preparation methods, which usually involve argon ion milling, can easily cause damage to the material, and the size and density of the induced defects depend on the milling conditions. In this work, the structural damage caused by argon ion milling of Hg1-x Cdx Te epilayers has been investigated. Multilayer samples with different Hg concentrations, as grown by molecular beam epitaxy, and p-n heterojunctions, as grown by liquid-phase epitaxy, have been examined. It is shown that, in addition to the milling conditions, the extent of the ion-induced damage depends sensitively on the Hg concentration of the Hg1-x Cdx Te alloy as well as the epilayer growth conditions (i.e., Hg rich or Te rich). A possible mechanism that explains these results is briefly discussed.
AB - Transmission electron microscopy (TEM) is widely used for the characterization of the microstructure of Hg1-x Cdx Te epilayers. Traditional TEM sample preparation methods, which usually involve argon ion milling, can easily cause damage to the material, and the size and density of the induced defects depend on the milling conditions. In this work, the structural damage caused by argon ion milling of Hg1-x Cdx Te epilayers has been investigated. Multilayer samples with different Hg concentrations, as grown by molecular beam epitaxy, and p-n heterojunctions, as grown by liquid-phase epitaxy, have been examined. It is shown that, in addition to the milling conditions, the extent of the ion-induced damage depends sensitively on the Hg concentration of the Hg1-x Cdx Te alloy as well as the epilayer growth conditions (i.e., Hg rich or Te rich). A possible mechanism that explains these results is briefly discussed.
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U2 - 10.1116/1.2207148
DO - 10.1116/1.2207148
M3 - Article
AN - SCOPUS:33745482827
SN - 0734-2101
VL - 24
SP - 995
EP - 1000
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 4
M1 - 110604JVA
ER -