Abstract

We present for the first time multi-scale modeling of self-heating effects in conventional MOSFET devices in a common-source and common-drain configurations in which one of the devices is the device under test (DUT) and the other device is the sensor. Via comparisons to experimental measurements performed at IMEC, we are able to uncover the temperature of the hot spot. This is also the first study in which a circuit with two transistors is being simulated using thermal particle-based device simulations.

Original languageEnglish (US)
Title of host publication2014 International Workshop on Computational Electronics, IWCE 2014
PublisherIEEE Computer Society
ISBN (Print)9781479954339
DOIs
StatePublished - Jan 1 2014
Event17th International Workshop on Computational Electronics, IWCE 2014 - Paris, France
Duration: Jun 3 2014Jun 6 2014

Publication series

Name2014 International Workshop on Computational Electronics, IWCE 2014

Other

Other17th International Workshop on Computational Electronics, IWCE 2014
CountryFrance
CityParis
Period6/3/146/6/14

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Keywords

  • hot-spot
  • multi-scale modeling
  • self-heating
  • thermal particle-based device simulations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Raleva, K., Bury, E., Kaczer, B., & Vasileska, D. (2014). Uncovering the temperature of the hotspot in nanoscale devices. In 2014 International Workshop on Computational Electronics, IWCE 2014 [6865840] (2014 International Workshop on Computational Electronics, IWCE 2014). IEEE Computer Society. https://doi.org/10.1109/IWCE.2014.6865840