Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures

Xin Hao Zhao; Shi Liu; Calli M. Campbell; Yuan Zhao; Maxwell B. Lassise; Yong-Hang Zhang

doi:10.1109/PVSC.2016.7750047

Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures

Xin Hao Zhao, Shi Liu, Calli M. Campbell, Yuan Zhao, Maxwell B. Lassise, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

CdTe/Mg_xCd_1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg_xCd_1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg_xCd_1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2302-2305
Number of pages	4
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750047
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

Carrier Lifetime
CdTe
Interface Recombination Velocity
MBE
Solar Cell

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7750047

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Cite this

Zhao, X. H., Liu, S., Campbell, C. M., Zhao, Y., Lassise, M. B., & Zhang, Y-H. (2016). Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2302-2305). [7750047] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750047

Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. / Zhao, Xin Hao; Liu, Shi; Campbell, Calli M.; Zhao, Yuan; Lassise, Maxwell B.; Zhang, Yong-Hang.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2302-2305 7750047.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, XH, Liu, S, Campbell, CM, Zhao, Y, Lassise, MB & Zhang, Y-H 2016, Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750047, Institute of Electrical and Electronics Engineers Inc., pp. 2302-2305, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750047

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abstract = "CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.",

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AB - CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

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