Abstract

A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%. The hemisphere is fabricated with a consistent aspect ratio (height versus width) using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

Original languageEnglish (US)
Article number031213
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - 2011

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hemispheres
Light emitting diodes
Luminescence
luminescence
Semiconductor materials
Fabrication
Plasma etching
Spontaneous emission
Photoresists
Semiconductor quantum wells
Aspect ratio
light emitting diodes
Computer simulation
fabrication
plasma etching
photoresists
spontaneous emission
aspect ratio
gallium arsenide
quantum wells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{5958b177d4d34042b40c423e54e79162,
title = "Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere",
abstract = "A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9{\%} and the overall extraction efficiency of the integrated device is as high as 90{\%}. The hemisphere is fabricated with a consistent aspect ratio (height versus width) using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.",
author = "Wu, {S. N.} and Yu, {S. Q.} and D. Ding and Shane Johnson and Yong-Hang Zhang",
year = "2011",
doi = "10.1116/1.3592190",
language = "English (US)",
volume = "29",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

AU - Wu, S. N.

AU - Yu, S. Q.

AU - Ding, D.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2011

Y1 - 2011

N2 - A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%. The hemisphere is fabricated with a consistent aspect ratio (height versus width) using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

AB - A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%. The hemisphere is fabricated with a consistent aspect ratio (height versus width) using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

UR - http://www.scopus.com/inward/record.url?scp=79958162531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958162531&partnerID=8YFLogxK

U2 - 10.1116/1.3592190

DO - 10.1116/1.3592190

M3 - Article

AN - SCOPUS:79958162531

VL - 29

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 3

M1 - 031213

ER -