Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

M. Woerner, R. A. Kaindl, M. Wurm, K. Reimann, T. Elsaesser, C. Miesner, K. Brunner, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

Abstract

We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

Original languageEnglish (US)
Pages (from-to)485-488
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
StatePublished - Mar 2002
Externally publishedYes

Keywords

  • Intersubband relaxation
  • Optical deformation potential
  • SiGe quantum walls

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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