Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

M. Woerner; R. A. Kaindl; M. Wurm; K. Reimann; T. Elsaesser; C. Miesner; K. Brunner; G. Abstreiter

doi:10.1016/S1386-9477(02)00176-5

Ultrafast intersubband scattering of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells

M. Woerner, R. A. Kaindl, M. Wurm, K. Reimann, T. Elsaesser, C. Miesner, K. Brunner, G. Abstreiter

Research output: Contribution to journal › Article › peer-review

Abstract

We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si_1-xGe_x/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

Original language	English (US)
Pages (from-to)	485-488
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00176-5
State	Published - Mar 2002
Externally published	Yes

Keywords

Intersubband relaxation
Optical deformation potential
SiGe quantum walls

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(02)00176-5

Cite this

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title = "Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells",

abstract = "We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.",

keywords = "Intersubband relaxation, Optical deformation potential, SiGe quantum walls",

author = "M. Woerner and Kaindl, {R. A.} and M. Wurm and K. Reimann and T. Elsaesser and C. Miesner and K. Brunner and G. Abstreiter",

year = "2002",

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doi = "10.1016/S1386-9477(02)00176-5",

language = "English (US)",

volume = "13",

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TY - JOUR

T1 - Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

AU - Woerner, M.

AU - Kaindl, R. A.

AU - Wurm, M.

AU - Reimann, K.

AU - Elsaesser, T.

AU - Miesner, C.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2002/3

Y1 - 2002/3

N2 - We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

AB - We report on an experimental and theoretical study of intersubband relaxation of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells. The ultrafast hole dynamics is studied in pump-probe experiments with 150 fs mid-infrared pulses. For 4.4 nm wide wells (x = 0.5) the lifetime of holes in the second heavy hole subband is only 250 fs due to rapid emission of optical phonons via the deformation potential interaction. Model calculations of hole-phonon scattering give an almost identical value and point to the crucial role of cascaded scattering via an intermediate subband with light-hole-split-off symmetry.

KW - Intersubband relaxation

KW - Optical deformation potential

KW - SiGe quantum walls

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