Abstract

Third generation concepts in photovoltaic devices depend critically on the dynamics of ultrafast carrier relaxation and electron-phonon interactions on very short times scales in nanostructures such as quantum wells, wires and dots. Hot carrier solar cells in particular depend on the reduction in the energy relaxation rate in an absorber material, where hot carriers are extracted through energy selective contacts. Here we investigate the short time carrier relaxation in quantum well, hot electron solar cells under varying photoexcitation conditions using ensemble Monte Carlo (EMC) simulation coupled with rate equation models, to understand the limiting factors affecting cell performance. In particular, we focus on the potential role of hot phonons in reducing the energy loss rate in order to achieve sufficient carrier temperature for efficient performance.

Original languageEnglish (US)
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2066-2070
Number of pages5
DOIs
StatePublished - Dec 1 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Goodnick, S., & Honsberg, C. (2011). Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2066-2070). [6186359] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186359