Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Keya Bhattacharyya; J. O. Orwa; S. M. Goodnick

doi:10.1063/1.352777

Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Keya Bhattacharyya, J. O. Orwa, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The transport properties of the two-dimensional electron gas in selectively doped Al_yGa_1-yAs/In_xGa_1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

Original language	English (US)
Pages (from-to)	4396-4403
Number of pages	8
Journal	Journal of Applied Physics
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.352777
State	Published - Dec 1 1993
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.352777

Cite this

@article{c2926ce2a95a4e4a90a3812116be82f2,

title = "Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures",

abstract = "The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.",

author = "Keya Bhattacharyya and Orwa, {J. O.} and Goodnick, {S. M.}",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.352777",

language = "English (US)",

volume = "73",

pages = "4396--4403",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

AU - Bhattacharyya, Keya

AU - Orwa, J. O.

AU - Goodnick, S. M.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

AB - The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

UR - http://www.scopus.com/inward/record.url?scp=0343757369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343757369&partnerID=8YFLogxK

U2 - 10.1063/1.352777

DO - 10.1063/1.352777

M3 - Article

AN - SCOPUS:0343757369

SN - 0021-8979

VL - 73

SP - 4396

EP - 4403

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this