Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Keya Bhattacharyya, J. O. Orwa, Stephen Goodnick

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

Original languageEnglish (US)
Pages (from-to)4396-4403
Number of pages8
JournalJournal of Applied Physics
Volume73
Issue number9
DOIs
StatePublished - 1993
Externally publishedYes

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aluminum gallium arsenides
scattering
electrons
iterative solution
room temperature
electron gas
Hall effect
molecular beam epitaxy
transport properties
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures. / Bhattacharyya, Keya; Orwa, J. O.; Goodnick, Stephen.

In: Journal of Applied Physics, Vol. 73, No. 9, 1993, p. 4396-4403.

Research output: Contribution to journalArticle

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