Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Keya Bhattacharyya; J. O. Orwa; S. M. Goodnick

doi:10.1063/1.352777

Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Keya Bhattacharyya, J. O. Orwa, S. M. Goodnick

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The transport properties of the two-dimensional electron gas in selectively doped Al_yGa_1-yAs/In_xGa_1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

Original language	English (US)
Pages (from-to)	4396-4403
Number of pages	8
Journal	Journal of Applied Physics
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.352777
State	Published - Dec 1 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.352777

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title = "Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures",

abstract = "The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.",

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AU - Bhattacharyya, Keya

AU - Orwa, J. O.

AU - Goodnick, S. M.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

AB - The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

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Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

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