Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes

Sijie Liu; Le Huang; Kedi Wu; Zhongming Wei; Beiju Huang; Xiuqing Meng; Sefaattin Tongay; Jian Liu; Jingbo Li; Hongda Chen

doi:10.1063/1.4962433

Tuned polarity and enhanced optoelectronic performances of few-layer Nb_0.125Re_0.875Se₂ flakes

Sijie Liu, Le Huang, Kedi Wu, Zhongming Wei, Beiju Huang, Xiuqing Meng, Sefaattin Tongay, Jian Liu, Jingbo Li, Hongda Chen

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe₂ is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb_0.125Re_0.875Se₂ based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe₂ (on the order of 0.1 cm² V^-1 s^-1). Moreover, such Nb_0.125Re_0.875Se₂ shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm² V^-1 s^-1. The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser.

Original language	English (US)
Article number	112102
Journal	Applied Physics Letters
Volume	109
Issue number	11
DOIs	https://doi.org/10.1063/1.4962433
State	Published - Sep 12 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4962433

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@article{090eab7708014afdb6eb8a0a7c142204,

title = "Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes",

abstract = "Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb0.125Re0.875Se2 based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe2 (on the order of 0.1 cm2 V-1 s-1). Moreover, such Nb0.125Re0.875Se2 shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm2 V-1 s-1. The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser.",

author = "Sijie Liu and Le Huang and Kedi Wu and Zhongming Wei and Beiju Huang and Xiuqing Meng and Sefaattin Tongay and Jian Liu and Jingbo Li and Hongda Chen",

note = "Funding Information: This work was financially supported by the Hundred Talents Program of Chinese Academy of Sciences (CAS), the National Natural Science Foundation of China (Grant Nos. 61335010, 61321063, 11404239, 61275169, and 51502283), and the CAS/SAFEA International Partnership Program for Creative Research Teams. S.T. gratefully acknowledges support from National Science Foundation DMR-1552220 and CMMI-1561839 Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4962433",

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T1 - Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes

AU - Liu, Sijie

AU - Huang, Le

AU - Wu, Kedi

AU - Wei, Zhongming

AU - Huang, Beiju

AU - Meng, Xiuqing

AU - Tongay, Sefaattin

AU - Liu, Jian

AU - Li, Jingbo

AU - Chen, Hongda

N1 - Funding Information: This work was financially supported by the Hundred Talents Program of Chinese Academy of Sciences (CAS), the National Natural Science Foundation of China (Grant Nos. 61335010, 61321063, 11404239, 61275169, and 51502283), and the CAS/SAFEA International Partnership Program for Creative Research Teams. S.T. gratefully acknowledges support from National Science Foundation DMR-1552220 and CMMI-1561839 Publisher Copyright: © 2016 Author(s).

PY - 2016/9/12

Y1 - 2016/9/12

N2 - Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb0.125Re0.875Se2 based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe2 (on the order of 0.1 cm2 V-1 s-1). Moreover, such Nb0.125Re0.875Se2 shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm2 V-1 s-1. The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser.

AB - Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb0.125Re0.875Se2 based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe2 (on the order of 0.1 cm2 V-1 s-1). Moreover, such Nb0.125Re0.875Se2 shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm2 V-1 s-1. The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser.

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Tuned polarity and enhanced optoelectronic performances of few-layer Nb_0.125Re_0.875Se₂ flakes

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