Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes

Sijie Liu, Le Huang, Kedi Wu, Zhongming Wei, Beiju Huang, Xiuqing Meng, Sefaattin Tongay, Jian Liu, Jingbo Li, Hongda Chen

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Both N-type and P-type semiconducting materials are essential in the integrated circuit and optoelectronic industry. Herein, the intrinsic P-type ReSe2 is converted to N-type by Nb-alloying. Despite the efficient carrier type conversion, we also measured the electric characteristics and photo-response of few-layer Nb0.125Re0.875Se2 based field-effect transistors under different lasers. The devices showed comparable mobility with pristine ReSe2 (on the order of 0.1 cm2 V-1 s-1). Moreover, such Nb0.125Re0.875Se2 shows high sensitivity to different visible lasers and has a light-improved mobility up to 1 cm2 V-1 s-1. The highest photoresponsivity reaches 11.7 A/W and external quantum efficiency reaches 2730% under 532 nm laser.

Original languageEnglish (US)
Article number112102
JournalApplied Physics Letters
Volume109
Issue number11
DOIs
StatePublished - Sep 12 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Liu, S., Huang, L., Wu, K., Wei, Z., Huang, B., Meng, X., Tongay, S., Liu, J., Li, J., & Chen, H. (2016). Tuned polarity and enhanced optoelectronic performances of few-layer Nb0.125Re0.875Se2 flakes. Applied Physics Letters, 109(11), [112102]. https://doi.org/10.1063/1.4962433