Abstract

Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the wellknown spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.

Original languageEnglish (US)
Title of host publication2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages364-365
Number of pages2
StatePublished - Dec 1 2009
Event2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy
Duration: Jul 26 2009Jul 30 2009

Publication series

Name2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Other

Other2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
CountryItaly
CityGenoa
Period7/26/097/30/09

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering

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