Abstract

Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the wellknown spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.

Original languageEnglish (US)
Title of host publication2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages364-365
Number of pages2
StatePublished - 2009
Event2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy
Duration: Jul 26 2009Jul 30 2009

Other

Other2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
CountryItaly
CityGenoa
Period7/26/097/30/09

Fingerprint

Point contacts
Magnetic fields
Electron-electron interactions
Spin polarization
Two dimensional electron gas
Semiconductor quantum wells
Electrostatics
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering

Cite this

Day, T. E., Cummings, A., Burke, A. M., Reno, J. L., Ferry, D. K., & Goodnick, S. (2009). Transport through magnetic quantum point contacts. In 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (pp. 364-365). [5394670]

Transport through magnetic quantum point contacts. / Day, Timothy E.; Cummings, Aron; Burke, Adam M.; Reno, John L.; Ferry, David K.; Goodnick, Stephen.

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009. 2009. p. 364-365 5394670.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Day, TE, Cummings, A, Burke, AM, Reno, JL, Ferry, DK & Goodnick, S 2009, Transport through magnetic quantum point contacts. in 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009., 5394670, pp. 364-365, 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, Genoa, Italy, 7/26/09.
Day TE, Cummings A, Burke AM, Reno JL, Ferry DK, Goodnick S. Transport through magnetic quantum point contacts. In 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009. 2009. p. 364-365. 5394670
Day, Timothy E. ; Cummings, Aron ; Burke, Adam M. ; Reno, John L. ; Ferry, David K. ; Goodnick, Stephen. / Transport through magnetic quantum point contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009. 2009. pp. 364-365
@inproceedings{5796adf760eb4007959e66e8938cfc36,
title = "Transport through magnetic quantum point contacts",
abstract = "Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the wellknown spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.",
author = "Day, {Timothy E.} and Aron Cummings and Burke, {Adam M.} and Reno, {John L.} and Ferry, {David K.} and Stephen Goodnick",
year = "2009",
language = "English (US)",
isbn = "9789810836948",
pages = "364--365",
booktitle = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",

}

TY - GEN

T1 - Transport through magnetic quantum point contacts

AU - Day, Timothy E.

AU - Cummings, Aron

AU - Burke, Adam M.

AU - Reno, John L.

AU - Ferry, David K.

AU - Goodnick, Stephen

PY - 2009

Y1 - 2009

N2 - Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the wellknown spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.

AB - Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the wellknown spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.

UR - http://www.scopus.com/inward/record.url?scp=77950988823&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950988823&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9789810836948

SP - 364

EP - 365

BT - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

ER -