Abstract

We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

Original languageEnglish (US)
Pages (from-to)39-43
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 2003

Fingerprint

MOSFET devices
Silicon
metal oxide semiconductors
field effect transistors
insulators
silicon
Impurities
Inversion layers
impurities
temperature dependence
Threshold voltage
threshold voltage
Temperature
Activation energy
wafers
wire
Wire
inversions
activation energy
temperature

Keywords

  • Effective mobility
  • SOI
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Naser, B., Cho, K. H., Hwang, S. W., Bird, J. P., Ferry, D. K., Goodnick, S., ... Ahn, D. (2003). Transport study of ultra-thin SOI MOSFETs. Physica E: Low-Dimensional Systems and Nanostructures, 19(1-2), 39-43. https://doi.org/10.1016/S1386-9477(03)00326-6

Transport study of ultra-thin SOI MOSFETs. / Naser, B.; Cho, K. H.; Hwang, S. W.; Bird, J. P.; Ferry, D. K.; Goodnick, Stephen; Park, B. G.; Ahn, D.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 19, No. 1-2, 07.2003, p. 39-43.

Research output: Contribution to journalArticle

Naser, B, Cho, KH, Hwang, SW, Bird, JP, Ferry, DK, Goodnick, S, Park, BG & Ahn, D 2003, 'Transport study of ultra-thin SOI MOSFETs', Physica E: Low-Dimensional Systems and Nanostructures, vol. 19, no. 1-2, pp. 39-43. https://doi.org/10.1016/S1386-9477(03)00326-6
Naser, B. ; Cho, K. H. ; Hwang, S. W. ; Bird, J. P. ; Ferry, D. K. ; Goodnick, Stephen ; Park, B. G. ; Ahn, D. / Transport study of ultra-thin SOI MOSFETs. In: Physica E: Low-Dimensional Systems and Nanostructures. 2003 ; Vol. 19, No. 1-2. pp. 39-43.
@article{c54fbee601ba4b67bd55f4e5b86fa130,
title = "Transport study of ultra-thin SOI MOSFETs",
abstract = "We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.",
keywords = "Effective mobility, SOI, Temperature",
author = "B. Naser and Cho, {K. H.} and Hwang, {S. W.} and Bird, {J. P.} and Ferry, {D. K.} and Stephen Goodnick and Park, {B. G.} and D. Ahn",
year = "2003",
month = "7",
doi = "10.1016/S1386-9477(03)00326-6",
language = "English (US)",
volume = "19",
pages = "39--43",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Transport study of ultra-thin SOI MOSFETs

AU - Naser, B.

AU - Cho, K. H.

AU - Hwang, S. W.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Park, B. G.

AU - Ahn, D.

PY - 2003/7

Y1 - 2003/7

N2 - We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

AB - We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

KW - Effective mobility

KW - SOI

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=0042510473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042510473&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(03)00326-6

DO - 10.1016/S1386-9477(03)00326-6

M3 - Article

AN - SCOPUS:0042510473

VL - 19

SP - 39

EP - 43

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -