@article{c54fbee601ba4b67bd55f4e5b86fa130,
title = "Transport study of ultra-thin SOI MOSFETs",
abstract = "We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.",
keywords = "Effective mobility, SOI, Temperature",
author = "B. Naser and Cho, {K. H.} and Hwang, {S. W.} and Bird, {J. P.} and Ferry, {D. K.} and Stephen Goodnick and Park, {B. G.} and D. Ahn",
note = "Funding Information: We have presented the results of detailed transport measurements on an SOI MOSFET. The temperature dependence of the threshold voltage and low-field effective mobility of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of This work was supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program under Contract No. M10116000008-02F0000-00610, and by the Office of Naval Research (N00014-98-0594). Work at Korea University was also supported by Brain Korea 21 Program in 2002. Work at Arizona State University was sponsored by the Department of Energy (DE-FG03-01ER45920, JPB) and the Office of Naval Research Nanoelectronics MURI (N00014-98-0594). μ eff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back interface. The transport of a 100 nm -wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.; Fourth International Symposium on Nanostructures and Mesoscopi ; Conference date: 17-02-2003 Through 21-02-2003",
year = "2003",
month = jul,
doi = "10.1016/S1386-9477(03)00326-6",
language = "English (US)",
volume = "19",
pages = "39--43",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-2",
}