Abstract

We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, 4.2 < T < 300 K). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a 100 nm-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.

Original languageEnglish (US)
Pages (from-to)39-43
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 1 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003

Keywords

  • Effective mobility
  • SOI
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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  • Cite this

    Naser, B., Cho, K. H., Hwang, S. W., Bird, J. P., Ferry, D. K., Goodnick, S., Park, B. G., & Ahn, D. (2003). Transport study of ultra-thin SOI MOSFETs. Physica E: Low-Dimensional Systems and Nanostructures, 19(1-2), 39-43. https://doi.org/10.1016/S1386-9477(03)00326-6