TY - JOUR
T1 - Transport in split-gate silicon quantum dots
AU - Gunther, A.
AU - Khoury, M.
AU - Miličić, S.
AU - Vasileska, Dragica
AU - Thornton, Trevor
AU - Goodnick, Stephen
N1 - Funding Information:
Acknowledgement—This work has been supported by the Office of Naval Research MURI Program.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000/5
Y1 - 2000/5
N2 - We report on the transport properties of novel Si quantum dot structures with controllable electron number through both top and side gates. Quantum dots were fabricated by a split-gate technique within a standard MOSFET process. Four-terminal dc electrical measurements were performed at 4.2 K in a liquid helium cryostat. Strong oscillations in the conductance through the dot are observed as a function of both the top gate bias and of the plunger bias. An overall monotonic and quasi-periodic movement of the peak conductance is observed which is believed to be associated with the bare level structure of the electronic states in the dot coupled with the Coulomb charging energy. Crossing behavior is observed as well, suggestive of either many-body effects or symmetry breaking of the dot states by the applied bias.
AB - We report on the transport properties of novel Si quantum dot structures with controllable electron number through both top and side gates. Quantum dots were fabricated by a split-gate technique within a standard MOSFET process. Four-terminal dc electrical measurements were performed at 4.2 K in a liquid helium cryostat. Strong oscillations in the conductance through the dot are observed as a function of both the top gate bias and of the plunger bias. An overall monotonic and quasi-periodic movement of the peak conductance is observed which is believed to be associated with the bare level structure of the electronic states in the dot coupled with the Coulomb charging energy. Crossing behavior is observed as well, suggestive of either many-body effects or symmetry breaking of the dot states by the applied bias.
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U2 - 10.1006/spmi.2000.0844
DO - 10.1006/spmi.2000.0844
M3 - Conference article
AN - SCOPUS:0034187964
SN - 0749-6036
VL - 27
SP - 373
EP - 376
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 5
T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)
Y2 - 6 December 1999 through 10 December 1999
ER -