Transport in split gate MOS quantum dot structures

A. D. Gunther, Stephen Goodnick, M. Khoury, A. E. Krishnaswamy, M. J. Rack, Trevor Thornton

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.

Original languageEnglish (US)
Pages (from-to)123-125
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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