Transport in split gate MOS quantum dot structures

A. D. Gunther, Stephen Goodnick, M. Khoury, A. E. Krishnaswamy, M. J. Rack, Trevor Thornton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.

Original languageEnglish (US)
Pages (from-to)123-125
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999

Fingerprint

Coulomb blockade
Galvanomagnetic effects
Helium
Cryostats
Semiconductor quantum dots
quantum dots
Liquids
direct current
cryostats
liquid helium
electrical measurement
depletion
field effect transistors
oscillations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Transport in split gate MOS quantum dot structures. / Gunther, A. D.; Goodnick, Stephen; Khoury, M.; Krishnaswamy, A. E.; Rack, M. J.; Thornton, Trevor.

In: Microelectronic Engineering, Vol. 47, No. 1, 06.1999, p. 123-125.

Research output: Contribution to journalArticle

Gunther, A. D. ; Goodnick, Stephen ; Khoury, M. ; Krishnaswamy, A. E. ; Rack, M. J. ; Thornton, Trevor. / Transport in split gate MOS quantum dot structures. In: Microelectronic Engineering. 1999 ; Vol. 47, No. 1. pp. 123-125.
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