Transport in split gate MOS quantum dot structures

A. D. Gunther; Stephen Goodnick; M. Khoury; A. E. Krishnaswamy; M. J. Rack; Trevor Thornton

doi:10.1016/S0167-9317(99)00167-7

Transport in split gate MOS quantum dot structures

A. D. Gunther, Stephen Goodnick, M. Khoury, A. E. Krishnaswamy, M. J. Rack, Trevor Thornton

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.

Original language	English (US)
Pages (from-to)	123-125
Number of pages	3
Journal	Microelectronic Engineering
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00167-7
State	Published - Jun 1999
Event	Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Transport in split gate MOS quantum dot structures",

abstract = "We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.",

author = "Gunther, {A. D.} and Stephen Goodnick and M. Khoury and Krishnaswamy, {A. E.} and Rack, {M. J.} and Trevor Thornton",

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T1 - Transport in split gate MOS quantum dot structures

AU - Gunther, A. D.

AU - Goodnick, Stephen

AU - Khoury, M.

AU - Krishnaswamy, A. E.

AU - Rack, M. J.

AU - Thornton, Trevor

PY - 1999/6

Y1 - 1999/6

N2 - We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.

AB - We have fabricated symmetric 200 nm and asymmetric 100 by 200 nm quantum dots by the split gate technique within a MOSFET structure. DC electrical and magnetotransport measurements were performed at 4.2 K in a liquid-Helium cryostat. It is found that varying the electrochemical potential by changing the bias on a top gate leads to oscillations in the DC conductance through the dot resembling Coulomb blockade peaks, but when the depletion gate biases are swept, these peaks become more complex in nature, exhibiting crossing or anti-crossing behavior.

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DO - 10.1016/S0167-9317(99)00167-7

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SN - 0167-9317

VL - 47

SP - 123

EP - 125

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98)

Y2 - 7 December 1998 through 11 December 1998

ER -

Transport in split gate MOS quantum dot structures

Abstract

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