Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Chemical Compounds

• Electron Mobility 100%
• Transmission Electron Microscopy 55%
• Leakage Current 55%
• Crystal Defect 49%
• Metal 37%
• Electron Microscopy 36%
• Amorphous Material 28%
• Diffusion 25%
• Oxide 22%
• Surface 13%

Physics & Astronomy

• high electron mobility transistors 86%
• transmission electron microscopy 54%
• characterization 46%
• barrier layers 12%
• microanalysis 12%
• metals 12%
• crystal defects 11%
• electric contacts 10%
• electron microscopy 10%
• leakage 9%
• wafers 8%
• damage 8%
• oxides 7%
• defects 6%
• electric potential 6%
• performance 5%

Engineering & Materials Science

• High electron mobility transistors 96%
• Transmission electron microscopy 85%
• Crystal defects 19%
• Microanalysis 16%
• Current voltage characteristics 15%
• Electron microscopy 15%
• Metals 15%
• Leakage currents 12%
• Oxides 10%
• Degradation 8%
• Defects 8%
• Testing 6%