TRANSIENT-ENHANCED DIFFUSION IN ION-IMPLANTED SILICON.

S. J. Pennycook, Robert Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the lattice by SPE growth. These effects are reduced for GA and are absent for B.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsSayan D. Mukherjee
Place of PublicationBellingham, WA, USA
PublisherSPIE
Pages69-76
Number of pages8
Volume797
ISBN (Print)089252832X
StatePublished - 1987
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Pennycook, S. J., & Culbertson, R. (1987). TRANSIENT-ENHANCED DIFFUSION IN ION-IMPLANTED SILICON. In S. D. Mukherjee (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 797, pp. 69-76). SPIE.