Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

Jing Lu; Michael J. DiNezza; Xin Hao Zhao; Shi Liu; Yong-Hang Zhang; Andras Kovacs; Rafal E. Dunin-Borkowski; David Smith

doi:10.1016/j.jcrysgro.2016.01.015

Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

Jing Lu, Michael J. DiNezza, Xin Hao Zhao, Shi Liu, Yong-Hang Zhang, Andras Kovacs, Rafal E. Dunin-Borkowski, David Smith

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A series of three CdTe/Mg_xCd_1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295°C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265°C has the best structural quality of the series, while structures grown at 30°C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265°C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

Original language	English (US)
Pages (from-to)	99-103
Number of pages	5
Journal	Journal of Crystal Growth
Volume	439
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.01.015
State	Published - Apr 1 2016

Keywords

A1. Defects
A1. Interfaces
A3. Molecular beam epitaxy
B1. Antimonides
B1. Tellurides
B2. Semiconducting II-VI

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.01.015

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title = "Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates",

abstract = "A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295°C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265°C has the best structural quality of the series, while structures grown at 30°C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265°C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.",

keywords = "A1. Defects, A1. Interfaces, A3. Molecular beam epitaxy, B1. Antimonides, B1. Tellurides, B2. Semiconducting II-VI",

author = "Jing Lu and DiNezza, {Michael J.} and Zhao, {Xin Hao} and Shi Liu and Yong-Hang Zhang and Andras Kovacs and Dunin-Borkowski, {Rafal E.} and David Smith",

note = "Funding Information: The authors gratefully acknowledge support from AFOSR (Grant no. FA9550-12-1-0444 ), Science Foundation Arizona (Grant no. SRG 0339-08 ) and the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.jcrysgro.2016.01.015",

language = "English (US)",

volume = "439",

pages = "99--103",

journal = "Journal of Crystal Growth",

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T1 - Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

AU - Lu, Jing

AU - DiNezza, Michael J.

AU - Zhao, Xin Hao

AU - Liu, Shi

AU - Zhang, Yong-Hang

AU - Kovacs, Andras

AU - Dunin-Borkowski, Rafal E.

AU - Smith, David

N1 - Funding Information: The authors gratefully acknowledge support from AFOSR (Grant no. FA9550-12-1-0444 ), Science Foundation Arizona (Grant no. SRG 0339-08 ) and the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295°C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265°C has the best structural quality of the series, while structures grown at 30°C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265°C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

AB - A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295°C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265°C has the best structural quality of the series, while structures grown at 30°C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265°C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

KW - A1. Defects

KW - A1. Interfaces

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B1. Tellurides

KW - B2. Semiconducting II-VI

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DO - 10.1016/j.jcrysgro.2016.01.015

M3 - Article

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VL - 439

SP - 99

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

Abstract

Keywords

ASJC Scopus subject areas

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