Abstract

A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295°C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265°C has the best structural quality of the series, while structures grown at 30°C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265°C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

Original languageEnglish (US)
Pages (from-to)99-103
Number of pages5
JournalJournal of Crystal Growth
Volume439
DOIs
StatePublished - Apr 1 2016

Keywords

  • A1. Defects
  • A1. Interfaces
  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B1. Tellurides
  • B2. Semiconducting II-VI

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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