Total dose radiation response of CMOS compatible SOI MESFETs

John Spann, Vadim Kushner, Trevor Thornton, Jinman Yang, Asha Balijepalli, Hugh Barnaby, Xiao Jie Chen, David Alexander, William T. Kemp, Steve J. Sampson, Michael E. Wood

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi 2 Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.

Original languageEnglish (US)
Pages (from-to)2398-2402
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number6
DOIs
StatePublished - Dec 1 2005

Keywords

  • MESFETs
  • Silicon-on-insulator technology
  • X-ray effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Spann, J., Kushner, V., Thornton, T., Yang, J., Balijepalli, A., Barnaby, H., Chen, X. J., Alexander, D., Kemp, W. T., Sampson, S. J., & Wood, M. E. (2005). Total dose radiation response of CMOS compatible SOI MESFETs. IEEE Transactions on Nuclear Science, 52(6), 2398-2402. https://doi.org/10.1109/TNS.2005.860701