Total dose radiation response of CMOS compatible SOI MESFETs

John Spann; Vadim Kushner; Trevor Thornton; Jinman Yang; Asha Balijepalli; Hugh Barnaby; Xiao Jie Chen; David Alexander; William T. Kemp; Steve J. Sampson; Michael E. Wood

doi:10.1109/TNS.2005.860701

Total dose radiation response of CMOS compatible SOI MESFETs

John Spann, Vadim Kushner, Trevor Thornton, Jinman Yang, Asha Balijepalli, Hugh Barnaby, Xiao Jie Chen, David Alexander, William T. Kemp, Steve J. Sampson, Michael E. Wood

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi ₂ Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.

Original language	English (US)
Pages (from-to)	2398-2402
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2005.860701
State	Published - Dec 2005

Keywords

MESFETs
Silicon-on-insulator technology
X-ray effects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2005.860701

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title = "Total dose radiation response of CMOS compatible SOI MESFETs",

abstract = "Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi 2 Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.",

keywords = "MESFETs, Silicon-on-insulator technology, X-ray effects",

author = "John Spann and Vadim Kushner and Trevor Thornton and Jinman Yang and Asha Balijepalli and Hugh Barnaby and Chen, {Xiao Jie} and David Alexander and Kemp, {William T.} and Sampson, {Steve J.} and Wood, {Michael E.}",

note = "Funding Information: Manuscript received July 8, 2005; revised August 26, 2005. The work at ASU was supported in part by the Office of Naval Research under Grant N00014-02-1-0783 and by SPAWAR Systems Center under Grant N66001-03-1-8933. The work of J. Spann was supported by the Air Force Research Laboratory Space Scholars Program.",

year = "2005",

month = dec,

doi = "10.1109/TNS.2005.860701",

language = "English (US)",

volume = "52",

pages = "2398--2402",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Total dose radiation response of CMOS compatible SOI MESFETs

AU - Spann, John

AU - Kushner, Vadim

AU - Thornton, Trevor

AU - Yang, Jinman

AU - Balijepalli, Asha

AU - Barnaby, Hugh

AU - Chen, Xiao Jie

AU - Alexander, David

AU - Kemp, William T.

AU - Sampson, Steve J.

AU - Wood, Michael E.

N1 - Funding Information: Manuscript received July 8, 2005; revised August 26, 2005. The work at ASU was supported in part by the Office of Naval Research under Grant N00014-02-1-0783 and by SPAWAR Systems Center under Grant N66001-03-1-8933. The work of J. Spann was supported by the Air Force Research Laboratory Space Scholars Program.

PY - 2005/12

Y1 - 2005/12

N2 - Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi 2 Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.

AB - Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi 2 Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.

KW - MESFETs

KW - Silicon-on-insulator technology

KW - X-ray effects

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JO - IEEE Transactions on Nuclear Science

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Total dose radiation response of CMOS compatible SOI MESFETs

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