Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects

Shaikh S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages222-225
Number of pages4
StatePublished - Dec 1 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Keywords

  • 3d monte carlo simulation
  • Effective potential
  • Narrow channel effect
  • Soi devices

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects'. Together they form a unique fingerprint.

  • Cite this

    Ahmed, S. S., & Vasileska, D. (2003). Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (pp. 222-225). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).