@inproceedings{8a7c9541e2d14d52b29d02e771553e45,
title = "Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects",
abstract = "We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.",
keywords = "3d monte carlo simulation, Effective potential, Narrow channel effect, Soi devices",
author = "Ahmed, {Shaikh S.} and Dragica Vasileska",
note = "Funding Information: The authors would like to thank Prof. Stephen M. Goodnick, and D.K. Ferry for valuable discussions during the preparation of this manuscript. The financial support from the Office of Naval Research under Contract No. N000149910318 and the National Science Foundation under Contract Nos. NSF-ECS-9976484 and NSF-ECS-0214867 are also acknowledged. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 ; Conference date: 23-02-2003 Through 27-02-2003",
year = "2003",
language = "English (US)",
isbn = "0972842209",
series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
pages = "222--225",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
}