Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects

Shaikh S. Ahmed, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages222-225
Number of pages4
Volume2
StatePublished - 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Fingerprint

Threshold voltage
Carrier concentration
Energy gap

Keywords

  • 3d monte carlo simulation
  • Effective potential
  • Narrow channel effect
  • Soi devices

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ahmed, S. S., & Vasileska, D. (2003). Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (Vol. 2, pp. 222-225)

Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. / Ahmed, Shaikh S.; Vasileska, Dragica.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. Vol. 2 2003. p. 222-225.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmed, SS & Vasileska, D 2003, Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. vol. 2, pp. 222-225, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 2/23/03.
Ahmed SS, Vasileska D. Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. In Laudon M, Romanowicz B, editors, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. Vol. 2. 2003. p. 222-225
Ahmed, Shaikh S. ; Vasileska, Dragica. / Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. editor / M. Laudon ; B. Romanowicz. Vol. 2 2003. pp. 222-225
@inproceedings{8a7c9541e2d14d52b29d02e771553e45,
title = "Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects",
abstract = "We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.",
keywords = "3d monte carlo simulation, Effective potential, Narrow channel effect, Soi devices",
author = "Ahmed, {Shaikh S.} and Dragica Vasileska",
year = "2003",
language = "English (US)",
isbn = "0972842209",
volume = "2",
pages = "222--225",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

}

TY - GEN

T1 - Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects

AU - Ahmed, Shaikh S.

AU - Vasileska, Dragica

PY - 2003

Y1 - 2003

N2 - We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

AB - We have investigated the role of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

KW - 3d monte carlo simulation

KW - Effective potential

KW - Narrow channel effect

KW - Soi devices

UR - http://www.scopus.com/inward/record.url?scp=6344287436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344287436&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344287436

SN - 0972842209

VL - 2

SP - 222

EP - 225

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -