Abstract

A-Si:H thin-film transistors demonstrate threshold voltage recovery of several volts after room-temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a-Si:H digital circuits is examined and is shown to be strictly limited.

Original languageEnglish (US)
Pages (from-to)1053-1057
Number of pages5
JournalJournal of the Society for Information Display
Volume14
Issue number11
DOIs
StatePublished - Nov 1 2006

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Keywords

  • Amorphous silicon
  • Circuit aging
  • Thin-film transistor
  • Threshold-voltage shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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