THIN-FILM FERROELECTRICS OF PZT OF SOL-GEL PROCESSING.

Sandwip Dey, K. D. Budd, D. A. Payne

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4. 10**6 V/m and 0. 36 C/m**2. The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.

Original languageEnglish (US)
Pages (from-to)80-81
Number of pages2
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume35
Issue number1
DOIs
StatePublished - Jan 1988
Externally publishedYes

Fingerprint

Ferroelectric thin films
Sol-gels
gels
Thin films
Remanence
thin films
Processing
Ferroelectric materials
counting
Data storage equipment
Fabrication
fabrication
Networks (circuits)
polarization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

Cite this

THIN-FILM FERROELECTRICS OF PZT OF SOL-GEL PROCESSING. / Dey, Sandwip; Budd, K. D.; Payne, D. A.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 35, No. 1, 01.1988, p. 80-81.

Research output: Contribution to journalArticle

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