Thin-Film Ferroelectrics of PZT by Sol-Gel Processing

S. K. Dey; K. D. Budd; D. A. Payne

doi:10.1109/58.4153

Thin-Film Ferroelectrics of PZT by Sol-Gel Processing

S. K. Dey, K. D. Budd, D. A. Payne

Research output: Contribution to journal › Article › peer-review

125 Scopus citations

Abstract

The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.10⁶ V/m and 0.36 C/m². The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.

Original language	English (US)
Pages (from-to)	80-81
Number of pages	2
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/58.4153
State	Published - Jan 1988
Externally published	Yes

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

Access to Document

10.1109/58.4153

Cite this

@article{b0a14162a05c4e55a2b1c1a0cf348e1f,

title = "Thin-Film Ferroelectrics of PZT by Sol-Gel Processing",

abstract = "The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.106 V/m and 0.36 C/m2. The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.",

author = "Dey, {S. K.} and Budd, {K. D.} and Payne, {D. A.}",

year = "1988",

month = jan,

doi = "10.1109/58.4153",

language = "English (US)",

volume = "35",

pages = "80--81",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Thin-Film Ferroelectrics of PZT by Sol-Gel Processing

AU - Dey, S. K.

AU - Budd, K. D.

AU - Payne, D. A.

PY - 1988/1

Y1 - 1988/1

N2 - The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.106 V/m and 0.36 C/m2. The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.

AB - The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.106 V/m and 0.36 C/m2. The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0023867860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023867860&partnerID=8YFLogxK

U2 - 10.1109/58.4153

DO - 10.1109/58.4153

M3 - Article

AN - SCOPUS:0023867860

SN - 0885-3010

VL - 35

SP - 80

EP - 81

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

IS - 1

ER -

Thin-Film Ferroelectrics of PZT by Sol-Gel Processing

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this