Thin-Film Ferroelectrics of PZT by Sol-Gel Processing

S. K. Dey, K. D. Budd, D. A. Payne

Research output: Contribution to journalArticle

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Abstract

The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.106 V/m and 0.36 C/m2. The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.

Original languageEnglish (US)
Pages (from-to)80-81
Number of pages2
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume35
Issue number1
DOIs
StatePublished - Jan 1988
Externally publishedYes

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ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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