The ferroelectric effect has been demonstrated for sol-gel derived PZT (53 /47) thin films. The respective values of coercive field and remanent polarization were 4.106 V/m and 0.36 C/m2. The thin film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory and, integrated optical circuit applications.
|Original language||English (US)|
|Number of pages||2|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|State||Published - Jan 1988|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering