Thermal annealing characteristics of Si and Mg-implanted GaN thin films

J. S. Chan, N. W. Cheung, L. Schloss, E. Jones, W. S. Wong, Nathan Newman, X. Liu, E. R. Weber, A. Gassman, M. D. Rubin

Research output: Contribution to journalArticle

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Abstract

In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014cm-2Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.

Original languageEnglish (US)
Pages (from-to)2702
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995
Externally publishedYes

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annealing
thin films
defects
energy of formation
ion implantation
electrical properties
optical properties
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chan, J. S., Cheung, N. W., Schloss, L., Jones, E., Wong, W. S., Newman, N., ... Rubin, M. D. (1995). Thermal annealing characteristics of Si and Mg-implanted GaN thin films. Applied Physics Letters, 2702. https://doi.org/10.1063/1.116314

Thermal annealing characteristics of Si and Mg-implanted GaN thin films. / Chan, J. S.; Cheung, N. W.; Schloss, L.; Jones, E.; Wong, W. S.; Newman, Nathan; Liu, X.; Weber, E. R.; Gassman, A.; Rubin, M. D.

In: Applied Physics Letters, 1995, p. 2702.

Research output: Contribution to journalArticle

Chan, JS, Cheung, NW, Schloss, L, Jones, E, Wong, WS, Newman, N, Liu, X, Weber, ER, Gassman, A & Rubin, MD 1995, 'Thermal annealing characteristics of Si and Mg-implanted GaN thin films', Applied Physics Letters, pp. 2702. https://doi.org/10.1063/1.116314
Chan, J. S. ; Cheung, N. W. ; Schloss, L. ; Jones, E. ; Wong, W. S. ; Newman, Nathan ; Liu, X. ; Weber, E. R. ; Gassman, A. ; Rubin, M. D. / Thermal annealing characteristics of Si and Mg-implanted GaN thin films. In: Applied Physics Letters. 1995 ; pp. 2702.
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