Abstract
The `smooth` quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O(ℏ2) QHD model. In addition, smooth QHD simulations of a classical electron shock wave are presented which agree with classical hydrodynamic model simulations and which do not exhibit the spurious dispersive oscillations of the O(ℏ2) QHD model.
Original language | English (US) |
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Pages (from-to) | 351-355 |
Number of pages | 5 |
Journal | Unknown Journal |
Volume | 9 |
Issue number | 4 |
DOIs | |
State | Published - 1999 |
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering