Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

Karan Mehta, Yuh Shiuan Liu, Jialin Wang, Hoon Jeong, Theeradetch Detchprohm, Young Jae Park, Shanthan Reddy Alugubelli, Shuo Wang, Fernando Ponce, Shyh Chiang Shen, Russell D. Dupuis, P. Douglas Yoder

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Although both III-N laser diodes and LEDs employ electron blocking layers (EBLs) to reduce electron leakage from the active region, laser diodes typically operate at far higher current densities than LEDs. Shortcomings of the common rectangular EBL are discussed. Two alternative EBL designs have been systematically studied using numerical simulation: the Inverse-Tapered EBL and the Inverse-Tapered Step-Graded EBL. It is shown that the efficacy of each of these EBL designs depends strongly on the operational current density, suggesting that EBL design considerations for III-N laser diodes and LEDs are fundamentally different.

Original languageEnglish (US)
JournalIEEE Journal of Quantum Electronics
DOIs
StateAccepted/In press - Jan 1 2018

Keywords

  • device modeling
  • electron blocking layer
  • III-Nitride
  • laser diode
  • VCSEL

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D., & Yoder, P. D. (Accepted/In press). Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/JQE.2018.2876662