Although both III-N laser diodes and LEDs employ electron blocking layers (EBLs) to reduce electron leakage from the active region, laser diodes typically operate at far higher current densities than LEDs. Shortcomings of the common rectangular EBL are discussed. Two alternative EBL designs have been systematically studied using numerical simulation: the Inverse-Tapered EBL and the Inverse-Tapered Step-Graded EBL. It is shown that the efficacy of each of these EBL designs depends strongly on the operational current density, suggesting that EBL design considerations for III-N laser diodes and LEDs are fundamentally different.
- device modeling
- electron blocking layer
- laser diode
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering