Theoretical study of subband levels in semiconductor heterostructures

W. Pötz, W. Porod, D. K. Ferry

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

We present an envelope-function approach designed to describe a large class of weakly inhomogeneous semiconductors. This model is a generalization of Kanes eight-band kp model with remote-band effects included in second-order perturbation theory. It is used to study subband levels of single and multiple quantum wells fabricated by layers of GaAs and Ga1-xAlxAs. The dependence of these levels on variations of input parameters such as effective masses and band offsets, as well as sample parameters such as alloy concentration and layer thickness, is investigated. Comparison of our results with experimental data on single GaAs/Ga1-xAlxAs quantum wells demonstrates that experimental uncertainties in sample length and alloy concentration do not allow a unique determination of the band offsets. For recent data on quasiparabolic wells, we find that the level splittings for electrons and holes cannot always be explained by a unique choice for the offsets. However, in agreement with previous observations, we find that these structures favor nearly symmetric band offsets.

Original languageEnglish (US)
Pages (from-to)3868-3875
Number of pages8
JournalPhysical Review B
Volume32
Issue number6
DOIs
StatePublished - 1985

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Semiconductor quantum wells
Heterojunctions
Semiconductor materials
Electrons
quantum wells
envelopes
perturbation theory
gallium arsenide
electrons
Uncertainty

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Theoretical study of subband levels in semiconductor heterostructures. / Pötz, W.; Porod, W.; Ferry, D. K.

In: Physical Review B, Vol. 32, No. 6, 1985, p. 3868-3875.

Research output: Contribution to journalArticle

Pötz, W. ; Porod, W. ; Ferry, D. K. / Theoretical study of subband levels in semiconductor heterostructures. In: Physical Review B. 1985 ; Vol. 32, No. 6. pp. 3868-3875.
@article{a6d5bc0e19a54aadbea2b165352bacb0,
title = "Theoretical study of subband levels in semiconductor heterostructures",
abstract = "We present an envelope-function approach designed to describe a large class of weakly inhomogeneous semiconductors. This model is a generalization of Kanes eight-band kp model with remote-band effects included in second-order perturbation theory. It is used to study subband levels of single and multiple quantum wells fabricated by layers of GaAs and Ga1-xAlxAs. The dependence of these levels on variations of input parameters such as effective masses and band offsets, as well as sample parameters such as alloy concentration and layer thickness, is investigated. Comparison of our results with experimental data on single GaAs/Ga1-xAlxAs quantum wells demonstrates that experimental uncertainties in sample length and alloy concentration do not allow a unique determination of the band offsets. For recent data on quasiparabolic wells, we find that the level splittings for electrons and holes cannot always be explained by a unique choice for the offsets. However, in agreement with previous observations, we find that these structures favor nearly symmetric band offsets.",
author = "W. P{\"o}tz and W. Porod and Ferry, {D. K.}",
year = "1985",
doi = "10.1103/PhysRevB.32.3868",
language = "English (US)",
volume = "32",
pages = "3868--3875",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Theoretical study of subband levels in semiconductor heterostructures

AU - Pötz, W.

AU - Porod, W.

AU - Ferry, D. K.

PY - 1985

Y1 - 1985

N2 - We present an envelope-function approach designed to describe a large class of weakly inhomogeneous semiconductors. This model is a generalization of Kanes eight-band kp model with remote-band effects included in second-order perturbation theory. It is used to study subband levels of single and multiple quantum wells fabricated by layers of GaAs and Ga1-xAlxAs. The dependence of these levels on variations of input parameters such as effective masses and band offsets, as well as sample parameters such as alloy concentration and layer thickness, is investigated. Comparison of our results with experimental data on single GaAs/Ga1-xAlxAs quantum wells demonstrates that experimental uncertainties in sample length and alloy concentration do not allow a unique determination of the band offsets. For recent data on quasiparabolic wells, we find that the level splittings for electrons and holes cannot always be explained by a unique choice for the offsets. However, in agreement with previous observations, we find that these structures favor nearly symmetric band offsets.

AB - We present an envelope-function approach designed to describe a large class of weakly inhomogeneous semiconductors. This model is a generalization of Kanes eight-band kp model with remote-band effects included in second-order perturbation theory. It is used to study subband levels of single and multiple quantum wells fabricated by layers of GaAs and Ga1-xAlxAs. The dependence of these levels on variations of input parameters such as effective masses and band offsets, as well as sample parameters such as alloy concentration and layer thickness, is investigated. Comparison of our results with experimental data on single GaAs/Ga1-xAlxAs quantum wells demonstrates that experimental uncertainties in sample length and alloy concentration do not allow a unique determination of the band offsets. For recent data on quasiparabolic wells, we find that the level splittings for electrons and holes cannot always be explained by a unique choice for the offsets. However, in agreement with previous observations, we find that these structures favor nearly symmetric band offsets.

UR - http://www.scopus.com/inward/record.url?scp=0042667996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042667996&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.32.3868

DO - 10.1103/PhysRevB.32.3868

M3 - Article

AN - SCOPUS:0042667996

VL - 32

SP - 3868

EP - 3875

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 6

ER -