Theoretical investigation of carrier-carrier effects in ultrafast experiments

L. Rota, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

We present a theoretical analysis of the effects of carrier-carrier interaction in polar semiconductors. Though a Monte Carlo simulation we show that carrier-carrier scattering is the dominant scattering mechanism in the femtosecond time regime after a laser photexcitation. We compare our theoretical results with both ultrafast absorption saturation studies and up-conversion luminescence experiments. The agreement with all types of experiments is externally good and shows the accuracy of our simulations. We also verify that pump and probe experiments are the ideal tool for the study of the strength of carrier-carrier interaction.

Original languageEnglish (US)
Pages (from-to)468-470
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 SUPPL
StatePublished - May 1994
Externally publishedYes

Fingerprint

Scattering
Experiments
Beam plasma interactions
Luminescence
Pumps
Semiconductor materials
Lasers
scattering
simulation
interactions
luminescence
pumps
saturation
probes
lasers
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials

Cite this

Theoretical investigation of carrier-carrier effects in ultrafast experiments. / Rota, L.; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 468-470.

Research output: Contribution to journalArticle

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