We present a theoretical analysis of the effects of carrier-carrier interaction in polar semiconductors. Though a Monte Carlo simulation we show that carrier-carrier scattering is the dominant scattering mechanism in the femtosecond time regime after a laser photoexcitation. We compare our theoretical results with both ultrafast absorption saturation studies and up-conversion luminescence experiments. The agreement with all types of experiments is extremely good and shows the accuracy of our simulations. We also verify that pump and probe experiments are the ideal tool for the study of the strength of carrier-carrier interaction.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry