The use of Bohm trajectories and the effective potential in probing quantum mechanical behavior in 2-D and spintronic sub-micron devices

L. Shifren, R. Akis, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions of the quantum electron onto the classical background potential via a smoothing function. We show that the choice of smoothing length, which is related to the "size" of the electron, is crucial to the success of the method. Bohm trajectories are used to study the properties of novel spintronic devices. Our simple study illustrates that magnetic fields can be used to effectively reproduce electrical gates in a quantum point contact device as well as showing promise used as a logic type device.

Original languageEnglish (US)
Title of host publication2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
EditorsM. Laudon, B. Romanowicz
Pages558-561
Number of pages4
StatePublished - 2001
Event2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 - Hilton Head Island, SC, United States
Duration: Mar 19 2001Mar 21 2001

Publication series

Name2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Other

Other2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
Country/TerritoryUnited States
CityHilton Head Island, SC
Period3/19/013/21/01

Keywords

  • Bohm Trajectories
  • Effective Potential
  • Spintronics

ASJC Scopus subject areas

  • General Engineering

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