The Si(111) 7 × 7 TO "1 × 1" transition

P. A. Bennett, M. W. Webb

Research output: Contribution to journalArticlepeer-review

175 Scopus citations

Abstract

We have made a detailed study of the Si(111) 7 × 7 to "1 × 1" transition at 1140 K using low-energy electron diffraction. Excess diffuse scattering appears during the transition whose temperature dependence and magnitude are consistent with the loss of the 7th order superlattice intensities showing the transition is to a disordered surface phase rather than a true unreconstructed ×1. This strongly favors the class of models for the 7 × 7 selvedge involving an ordered arrangement of subunits like vacancies or adatoms rather than models with periodic distortion. The superlattice intensity shows the transition is continuous and reversible at least for temperatures below 0.995 Tc. The critical exponent for the long-range order is β = 0.11 ± 0.015 similar to those for 2D Ising or Potts models. However, the system does not show the critical scattering properties expected for simple models. The relaxation time seems to diverge near Tc but only for negative temperature increments.

Original languageEnglish (US)
Pages (from-to)74-104
Number of pages31
JournalSurface Science
Volume104
Issue number1
DOIs
StatePublished - Mar 1 1981
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'The Si(111) 7 × 7 TO "1 × 1" transition'. Together they form a unique fingerprint.

Cite this