Abstract

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for VG = V D = 1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

Original languageEnglish (US)
Pages (from-to)180-186
Number of pages7
JournalJournal of Computational Electronics
Volume9
Issue number3-4
DOIs
StatePublished - Dec 1 2010

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Keywords

  • Analytic bands MC device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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