Abstract
The pH response of a silicon-on-insulator (SOI) MOSFET with an integrated nanofluidic cell was studied. The surface of the MOSFET was functionalized with amino-propyl-triethoxysilane (APTES) molecules resulting in an amine terminated substrate. A 75 μm thick SU-8 photoresist was spin coated and patterned over the device surface in order to make a cell to contain the solutions.
Original language | English (US) |
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Title of host publication | IEEE International SOI Conference |
Pages | 114-116 |
Number of pages | 3 |
State | Published - 2003 |
Event | 2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States Duration: Sep 29 2003 → Oct 2 2003 |
Other
Other | 2003 IEEE International SOI Conference Proceedings |
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Country/Territory | United States |
City | Newport Beach, CA |
Period | 9/29/03 → 10/2/03 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering