The pH Response of a Silicon-on-Insulator MOSFET with an Integrated Nanofluidic Cell

B. R. Takulapalli, Trevor Thornton, D. Gust, B. Ashcroft, Stuart Lindsay, H. Q. Zhang, Nongjian Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The pH response of a silicon-on-insulator (SOI) MOSFET with an integrated nanofluidic cell was studied. The surface of the MOSFET was functionalized with amino-propyl-triethoxysilane (APTES) molecules resulting in an amine terminated substrate. A 75 μm thick SU-8 photoresist was spin coated and patterned over the device surface in order to make a cell to contain the solutions.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Pages114-116
Number of pages3
StatePublished - 2003
Event2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States
Duration: Sep 29 2003Oct 2 2003

Other

Other2003 IEEE International SOI Conference Proceedings
CountryUnited States
CityNewport Beach, CA
Period9/29/0310/2/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The pH Response of a Silicon-on-Insulator MOSFET with an Integrated Nanofluidic Cell'. Together they form a unique fingerprint.

Cite this