2 Scopus citations

Abstract

The pH response of a silicon-on-insulator (SOI) MOSFET with an integrated nanofluidic cell was studied. The surface of the MOSFET was functionalized with amino-propyl-triethoxysilane (APTES) molecules resulting in an amine terminated substrate. A 75 μm thick SU-8 photoresist was spin coated and patterned over the device surface in order to make a cell to contain the solutions.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Pages114-116
Number of pages3
StatePublished - 2003
Event2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States
Duration: Sep 29 2003Oct 2 2003

Other

Other2003 IEEE International SOI Conference Proceedings
CountryUnited States
CityNewport Beach, CA
Period9/29/0310/2/03

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takulapalli, B. R., Thornton, T., Gust, D., Ashcroft, B., Lindsay, S., Zhang, H. Q., & Tao, N. (2003). The pH Response of a Silicon-on-Insulator MOSFET with an Integrated Nanofluidic Cell. In IEEE International SOI Conference (pp. 114-116)