6 Citations (Scopus)

Abstract

High-resolution monochromated electron energy-loss spectroscopy has the potential to map vibrational modes at nanometer resolution. Using the SiO2/Si interface as a test case, we observe an initial drop in the SiO2 vibrational signal when the electron probe is 200 nm from the Si due to long-range nature of the Coulomb interaction. However, the distance from the interface at which the SiO2 integrated signal intensity drops to half its maximum value is 5 nm. We show that nanometer resolution is possible when selecting the SiO2/Si interface signal which is at a different energy position than the bulk signal. Calculations also show that, at 60 kV, the signal in the SiO2 can be treated nonrelativistically (no retardation) while the signal in the Si, not surprisingly, is dominated by relativistic effects. For typical transmission electron microscope specimen thicknesses, surface coupling effects must also be considered.

Original languageEnglish (US)
Pages (from-to)i14-i23
JournalMicroscopy
Volume67
DOIs
StatePublished - Mar 1 2018

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Electron energy loss spectroscopy
Coulomb interactions
Electron Energy-Loss Spectroscopy
Electron microscopes
spatial resolution
Electrons
high resolution
electron probes
relativistic effects
vibration mode
electron microscopes
energy dissipation
electron energy
spectroscopy
interactions

Keywords

  • Dielectric theory
  • Interface
  • Monochromated EELS
  • Nanometer spatial resolution
  • Surface
  • Vibrational spectroscopy

ASJC Scopus subject areas

  • Structural Biology
  • Instrumentation
  • Radiology Nuclear Medicine and imaging

Cite this

The influence of surfaces and interfaces on high spatial resolution vibrational EELS from SiO2. / Venkatraman, Kartik; Rez, Peter; March, Katia; Crozier, Peter.

In: Microscopy, Vol. 67, 01.03.2018, p. i14-i23.

Research output: Contribution to journalArticle

@article{68b56b518a2e4760960ff6daeca80776,
title = "The influence of surfaces and interfaces on high spatial resolution vibrational EELS from SiO2",
abstract = "High-resolution monochromated electron energy-loss spectroscopy has the potential to map vibrational modes at nanometer resolution. Using the SiO2/Si interface as a test case, we observe an initial drop in the SiO2 vibrational signal when the electron probe is 200 nm from the Si due to long-range nature of the Coulomb interaction. However, the distance from the interface at which the SiO2 integrated signal intensity drops to half its maximum value is 5 nm. We show that nanometer resolution is possible when selecting the SiO2/Si interface signal which is at a different energy position than the bulk signal. Calculations also show that, at 60 kV, the signal in the SiO2 can be treated nonrelativistically (no retardation) while the signal in the Si, not surprisingly, is dominated by relativistic effects. For typical transmission electron microscope specimen thicknesses, surface coupling effects must also be considered.",
keywords = "Dielectric theory, Interface, Monochromated EELS, Nanometer spatial resolution, Surface, Vibrational spectroscopy",
author = "Kartik Venkatraman and Peter Rez and Katia March and Peter Crozier",
year = "2018",
month = "3",
day = "1",
doi = "10.1093/jmicro/dfy003",
language = "English (US)",
volume = "67",
pages = "i14--i23",
journal = "Microscopy (Oxford, England)",
issn = "2050-5698",
publisher = "Japanese Society of Microscopy",

}

TY - JOUR

T1 - The influence of surfaces and interfaces on high spatial resolution vibrational EELS from SiO2

AU - Venkatraman, Kartik

AU - Rez, Peter

AU - March, Katia

AU - Crozier, Peter

PY - 2018/3/1

Y1 - 2018/3/1

N2 - High-resolution monochromated electron energy-loss spectroscopy has the potential to map vibrational modes at nanometer resolution. Using the SiO2/Si interface as a test case, we observe an initial drop in the SiO2 vibrational signal when the electron probe is 200 nm from the Si due to long-range nature of the Coulomb interaction. However, the distance from the interface at which the SiO2 integrated signal intensity drops to half its maximum value is 5 nm. We show that nanometer resolution is possible when selecting the SiO2/Si interface signal which is at a different energy position than the bulk signal. Calculations also show that, at 60 kV, the signal in the SiO2 can be treated nonrelativistically (no retardation) while the signal in the Si, not surprisingly, is dominated by relativistic effects. For typical transmission electron microscope specimen thicknesses, surface coupling effects must also be considered.

AB - High-resolution monochromated electron energy-loss spectroscopy has the potential to map vibrational modes at nanometer resolution. Using the SiO2/Si interface as a test case, we observe an initial drop in the SiO2 vibrational signal when the electron probe is 200 nm from the Si due to long-range nature of the Coulomb interaction. However, the distance from the interface at which the SiO2 integrated signal intensity drops to half its maximum value is 5 nm. We show that nanometer resolution is possible when selecting the SiO2/Si interface signal which is at a different energy position than the bulk signal. Calculations also show that, at 60 kV, the signal in the SiO2 can be treated nonrelativistically (no retardation) while the signal in the Si, not surprisingly, is dominated by relativistic effects. For typical transmission electron microscope specimen thicknesses, surface coupling effects must also be considered.

KW - Dielectric theory

KW - Interface

KW - Monochromated EELS

KW - Nanometer spatial resolution

KW - Surface

KW - Vibrational spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85044546376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044546376&partnerID=8YFLogxK

U2 - 10.1093/jmicro/dfy003

DO - 10.1093/jmicro/dfy003

M3 - Article

VL - 67

SP - i14-i23

JO - Microscopy (Oxford, England)

JF - Microscopy (Oxford, England)

SN - 2050-5698

ER -