Abstract
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p-n diodes is achieved.
Original language | English (US) |
---|---|
Article number | 222104 |
Journal | Applied Physics Letters |
Volume | 118 |
Issue number | 22 |
DOIs | |
State | Published - May 31 2021 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)