The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

D. Cherns; R. F. Webster; S. V. Novikov; C. T. Foxon; A. M. Fischer; Fernando Ponce

doi:10.1016/j.jcrysgro.2013.09.012

The growth of In_0.5Ga_0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Molecular beam epitaxy has been used to grow continuous overlayers of In_0.5Ga_0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 μm apart in the overlayer. In the In_0.5Ga_0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In_0.5Ga_0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 μm scale. The reasons for compositional variations and the growth of cubic material are discussed.

Original language	English (US)
Pages (from-to)	55-60
Number of pages	6
Journal	Journal of Crystal Growth
Volume	384
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.09.012
State	Published - 2013

Keywords

A1. Characterisation
A1. Nanostructures
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III-V materials
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2013.09.012

Cite this

@article{0b18b13eec174856a0e0173ad8164e6a,

title = "The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays",

abstract = "Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 μm apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 μm scale. The reasons for compositional variations and the growth of cubic material are discussed.",

keywords = "A1. Characterisation, A1. Nanostructures, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials, B3. Solar cells",

author = "D. Cherns and Webster, {R. F.} and Novikov, {S. V.} and Foxon, {C. T.} and Fischer, {A. M.} and Fernando Ponce",

note = "Funding Information: This work is supported by EPSRC grant number EP/I035501/1 , and by NSF grant DMR-1108450 . ",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.09.012",

language = "English (US)",

volume = "384",

pages = "55--60",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays

AU - Cherns, D.

AU - Webster, R. F.

AU - Novikov, S. V.

AU - Foxon, C. T.

AU - Fischer, A. M.

AU - Ponce, Fernando

N1 - Funding Information: This work is supported by EPSRC grant number EP/I035501/1 , and by NSF grant DMR-1108450 .

PY - 2013

Y1 - 2013

N2 - Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 μm apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 μm scale. The reasons for compositional variations and the growth of cubic material are discussed.

AB - Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 μm apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 μm scale. The reasons for compositional variations and the growth of cubic material are discussed.

KW - A1. Characterisation

KW - A1. Nanostructures

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B3. Solar cells

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DO - 10.1016/j.jcrysgro.2013.09.012

M3 - Article

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SN - 0022-0248

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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