The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0)

N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, Robert Culbertson, David Smith, V. Atluri, P. Zimmerman, K. T. Queeney

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Ordering is observed at SiO2/Si(1 0 0) interfaces when 2-40 nm thick SiO2 films are grown on passivated, ordered (1 × 1) Si(1 0 0) surfaces produced by a novel wet chemical cleaning. A mechanism is proposed for the occurrence of this ordering. The thin oxides are grown by a variety of conventional oxidation techniques or by rapid thermal oxidation between 750 and 1100°C. The evolution of oxygen, carbon, hydrogen and silicon coverages are detected by ion beam analysis (IBA) using a combination of ion channeling, nuclear resonance, elastic recoil detection and time-of-flight secondary ion mass spectrometry. IBA detects Si surface peak areal densities lower than that of a disorder-free, bulk-terminated (1×1) Si(100) crystal calculated by Monte-Carlo methods. This result indicates that Si substrate atoms are shadowed by Si atoms located in a 2 nm ordered region on the oxide side of the interface. Beyond 2 nm, the oxide becomes amorphous. Reflection high-energy electron diffraction (RHEED) at 10 keV confirms the presence of order: a (1 × 1) streaky pattern commensurate with Si(1 0 0) is observed instead of an amorphous surface. Infrared (IR) spectroscopy shows that the ordered SiO2/Si(100) interfaces exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial oxide region near Si. This is in contrast to a rapidly changing frequency found for conventional oxides in the same region. Thus, IR supports the presence of a well-defined bond-length and stoichiometry as detected by IBA and RHEED.

Original languageEnglish (US)
Pages (from-to)303-316
Number of pages14
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume87
Issue number3
DOIs
StatePublished - Dec 19 2001

Fingerprint

Oxides
oxides
Ion beams
Reflection high energy electron diffraction
ion beams
high energy electrons
electron diffraction
chemical cleaning
Chemical cleaning
Atoms
Oxidation
oxidation
Bond length
Silicon
Secondary ion mass spectrometry
Thick films
Stoichiometry
Light absorption
secondary ion mass spectrometry
thick films

Keywords

  • Amorphous surface
  • Crystalline interfaces
  • Ion beam analysis
  • Ion channeling
  • Nuclear resonance
  • Silicon oxide
  • SiO/Si (100)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0). / Herbots, N.; Shaw, J. M.; Hurst, Q. B.; Grams, M. P.; Culbertson, Robert; Smith, David; Atluri, V.; Zimmerman, P.; Queeney, K. T.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 87, No. 3, 19.12.2001, p. 303-316.

Research output: Contribution to journalArticle

Herbots, N. ; Shaw, J. M. ; Hurst, Q. B. ; Grams, M. P. ; Culbertson, Robert ; Smith, David ; Atluri, V. ; Zimmerman, P. ; Queeney, K. T. / The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0). In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001 ; Vol. 87, No. 3. pp. 303-316.
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T1 - The formation of ordered, ultrathin SiO2/Si(1 0 0) interfaces grown on (1 × 1) Si(1 0 0)

AU - Herbots, N.

AU - Shaw, J. M.

AU - Hurst, Q. B.

AU - Grams, M. P.

AU - Culbertson, Robert

AU - Smith, David

AU - Atluri, V.

AU - Zimmerman, P.

AU - Queeney, K. T.

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N2 - Ordering is observed at SiO2/Si(1 0 0) interfaces when 2-40 nm thick SiO2 films are grown on passivated, ordered (1 × 1) Si(1 0 0) surfaces produced by a novel wet chemical cleaning. A mechanism is proposed for the occurrence of this ordering. The thin oxides are grown by a variety of conventional oxidation techniques or by rapid thermal oxidation between 750 and 1100°C. The evolution of oxygen, carbon, hydrogen and silicon coverages are detected by ion beam analysis (IBA) using a combination of ion channeling, nuclear resonance, elastic recoil detection and time-of-flight secondary ion mass spectrometry. IBA detects Si surface peak areal densities lower than that of a disorder-free, bulk-terminated (1×1) Si(100) crystal calculated by Monte-Carlo methods. This result indicates that Si substrate atoms are shadowed by Si atoms located in a 2 nm ordered region on the oxide side of the interface. Beyond 2 nm, the oxide becomes amorphous. Reflection high-energy electron diffraction (RHEED) at 10 keV confirms the presence of order: a (1 × 1) streaky pattern commensurate with Si(1 0 0) is observed instead of an amorphous surface. Infrared (IR) spectroscopy shows that the ordered SiO2/Si(100) interfaces exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial oxide region near Si. This is in contrast to a rapidly changing frequency found for conventional oxides in the same region. Thus, IR supports the presence of a well-defined bond-length and stoichiometry as detected by IBA and RHEED.

AB - Ordering is observed at SiO2/Si(1 0 0) interfaces when 2-40 nm thick SiO2 films are grown on passivated, ordered (1 × 1) Si(1 0 0) surfaces produced by a novel wet chemical cleaning. A mechanism is proposed for the occurrence of this ordering. The thin oxides are grown by a variety of conventional oxidation techniques or by rapid thermal oxidation between 750 and 1100°C. The evolution of oxygen, carbon, hydrogen and silicon coverages are detected by ion beam analysis (IBA) using a combination of ion channeling, nuclear resonance, elastic recoil detection and time-of-flight secondary ion mass spectrometry. IBA detects Si surface peak areal densities lower than that of a disorder-free, bulk-terminated (1×1) Si(100) crystal calculated by Monte-Carlo methods. This result indicates that Si substrate atoms are shadowed by Si atoms located in a 2 nm ordered region on the oxide side of the interface. Beyond 2 nm, the oxide becomes amorphous. Reflection high-energy electron diffraction (RHEED) at 10 keV confirms the presence of order: a (1 × 1) streaky pattern commensurate with Si(1 0 0) is observed instead of an amorphous surface. Infrared (IR) spectroscopy shows that the ordered SiO2/Si(100) interfaces exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial oxide region near Si. This is in contrast to a rapidly changing frequency found for conventional oxides in the same region. Thus, IR supports the presence of a well-defined bond-length and stoichiometry as detected by IBA and RHEED.

KW - Amorphous surface

KW - Crystalline interfaces

KW - Ion beam analysis

KW - Ion channeling

KW - Nuclear resonance

KW - Silicon oxide

KW - SiO/Si (100)

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