The electron-phonon scattering rate of zinc blende GaN

R. Akis; M. Dür; Stephen Goodnick

doi:10.1016/S0921-4526(01)01365-5

The electron-phonon scattering rate of zinc blende GaN

R. Akis, M. Dür, Stephen Goodnick

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.

Original language	English (US)
Pages (from-to)	42-46
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01365-5
State	Published - Mar 2002

Keywords

Electron-phonon interaction
GaN
High-field transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)01365-5

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title = "The electron-phonon scattering rate of zinc blende GaN",

abstract = "We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.",

keywords = "Electron-phonon interaction, GaN, High-field transport",

author = "R. Akis and M. D{\"u}r and Stephen Goodnick",

note = "Funding Information: We acknowledge the financial support of ONR and useful discussions with Massimo Fischetti.",

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T1 - The electron-phonon scattering rate of zinc blende GaN

AU - Akis, R.

AU - Dür, M.

AU - Goodnick, Stephen

N1 - Funding Information: We acknowledge the financial support of ONR and useful discussions with Massimo Fischetti.

PY - 2002/3

Y1 - 2002/3

N2 - We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.

AB - We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.

KW - Electron-phonon interaction

KW - GaN

KW - High-field transport

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DO - 10.1016/S0921-4526(01)01365-5

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EP - 46

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

The electron-phonon scattering rate of zinc blende GaN

Abstract

Keywords

ASJC Scopus subject areas

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