Abstract

We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.

Original languageEnglish (US)
Pages (from-to)42-46
Number of pages5
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 2002

Fingerprint

Electronic density of states
Phonon scattering
Electron scattering
Band structure
Zinc
zinc
Scattering
Ions
scattering
electrons
approximation
electronics
ions

Keywords

  • Electron-phonon interaction
  • GaN
  • High-field transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The electron-phonon scattering rate of zinc blende GaN. / Akis, R.; Dür, M.; Goodnick, Stephen.

In: Physica B: Condensed Matter, Vol. 314, No. 1-4, 03.2002, p. 42-46.

Research output: Contribution to journalArticle

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