The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells

H. L. Cotal; Richard King; M. Haddad; J. H. Ermer; N. H. Karam; D. D. Krut; D. E. Joslin; M. Takahashi; B. T. Cavicchi

doi:10.1109/PVSC.2000.916133

The effects of electron irradiation on triple-junction Ga_0.5In_0.5P/GaAs/Ge solar cells

H. L. Cotal, Richard King, M. Haddad, J. H. Ermer, N. H. Karam, D. D. Krut, D. E. Joslin, M. Takahashi, B. T. Cavicchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

Ga_0.5In_0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell I_sc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×10¹⁵ e^-/cm², and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1316-1319
Number of pages	4
Volume	2000-January
ISBN (Print)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.916133
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	9/15/00 → 9/22/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/PVSC.2000.916133

Cite this

Cotal, H. L., King, R., Haddad, M., Ermer, J. H., Karam, N. H., Krut, D. D., Joslin, D. E., Takahashi, M., & Cavicchi, B. T. (2000). The effects of electron irradiation on triple-junction Ga_0.5In_0.5P/GaAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 1316-1319). Article 916133 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916133

The effects of electron irradiation on triple-junction Ga_0.5In_0.5P/GaAs/Ge solar cells. / Cotal, H. L.; King, Richard; Haddad, M. et al.
Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 1316-1319 916133.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cotal, HL, King, R, Haddad, M, Ermer, JH, Karam, NH, Krut, DD, Joslin, DE, Takahashi, M & Cavicchi, BT 2000, The effects of electron irradiation on triple-junction Ga_0.5In_0.5P/GaAs/Ge solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916133, Institute of Electrical and Electronics Engineers Inc., pp. 1316-1319, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916133

@inproceedings{2def55b84a2441e5b1e0388d8daad0c4,

title = "The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells",

abstract = "Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.",

author = "Cotal, {H. L.} and Richard King and M. Haddad and Ermer, {J. H.} and Karam, {N. H.} and Krut, {D. D.} and Joslin, {D. E.} and M. Takahashi and Cavicchi, {B. T.}",

year = "2000",

doi = "10.1109/PVSC.2000.916133",

language = "English (US)",

isbn = "0780357728",

volume = "2000-January",

pages = "1316--1319",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

}

TY - GEN

T1 - The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells

AU - Cotal, H. L.

AU - King, Richard

AU - Haddad, M.

AU - Ermer, J. H.

AU - Karam, N. H.

AU - Krut, D. D.

AU - Joslin, D. E.

AU - Takahashi, M.

AU - Cavicchi, B. T.

PY - 2000

Y1 - 2000

N2 - Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

AB - Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

UR - http://www.scopus.com/inward/record.url?scp=84949562419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949562419&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2000.916133

DO - 10.1109/PVSC.2000.916133

M3 - Conference contribution

AN - SCOPUS:84949562419

SN - 0780357728

VL - 2000-January

SP - 1316

EP - 1319

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -