The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells

H. L. Cotal, Richard King, M. Haddad, J. H. Ermer, N. H. Karam, D. D. Krut, D. E. Joslin, M. Takahashi, B. T. Cavicchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1316-1319
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

Fingerprint

Electron irradiation
Solar cells
Degradation
NASA
Radiation
Electrons
Air

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Cotal, H. L., King, R., Haddad, M., Ermer, J. H., Karam, N. H., Krut, D. D., ... Cavicchi, B. T. (2000). The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 1316-1319). [916133] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916133

The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells. / Cotal, H. L.; King, Richard; Haddad, M.; Ermer, J. H.; Karam, N. H.; Krut, D. D.; Joslin, D. E.; Takahashi, M.; Cavicchi, B. T.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 1316-1319 916133.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cotal, HL, King, R, Haddad, M, Ermer, JH, Karam, NH, Krut, DD, Joslin, DE, Takahashi, M & Cavicchi, BT 2000, The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916133, Institute of Electrical and Electronics Engineers Inc., pp. 1316-1319, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916133
Cotal HL, King R, Haddad M, Ermer JH, Karam NH, Krut DD et al. The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 1316-1319. 916133 https://doi.org/10.1109/PVSC.2000.916133
Cotal, H. L. ; King, Richard ; Haddad, M. ; Ermer, J. H. ; Karam, N. H. ; Krut, D. D. ; Joslin, D. E. ; Takahashi, M. ; Cavicchi, B. T. / The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 1316-1319
@inproceedings{2def55b84a2441e5b1e0388d8daad0c4,
title = "The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells",
abstract = "Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.",
author = "Cotal, {H. L.} and Richard King and M. Haddad and Ermer, {J. H.} and Karam, {N. H.} and Krut, {D. D.} and Joslin, {D. E.} and M. Takahashi and Cavicchi, {B. T.}",
year = "2000",
doi = "10.1109/PVSC.2000.916133",
language = "English (US)",
isbn = "0780357728",
volume = "2000-January",
pages = "1316--1319",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells

AU - Cotal, H. L.

AU - King, Richard

AU - Haddad, M.

AU - Ermer, J. H.

AU - Karam, N. H.

AU - Krut, D. D.

AU - Joslin, D. E.

AU - Takahashi, M.

AU - Cavicchi, B. T.

PY - 2000

Y1 - 2000

N2 - Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

AB - Ga0.5In0.5P/GaAs/Ge solar cells have been fabricated at Spectrolab under the Multijunction Solar Cell Manufacturing Technology (Mantech) program, sponsored by the US Air Force and NASA. The cells were irradiated with increasing 1 MeV electron fluences, and the degradation of their PV parameters was characterized using light I-V and external QE. Analysis of the PV parameters of the GaInP top subcell showed little degradation, and was not a limitation for triple junction (3J) cell performance. Furthermore, the radiation degradation of the Ge subcell PV parameters was almost negligible. The GaAs subcell Isc, however, did limit the device performance as is traditionally documented. The final-to-initial maximum power ratio (P/Po) of 3J cells was near 0.833 at a fluence of 1×1015 e-/cm2, and matches Spectrolab's presently established value of 0.83 for standard production of space-qualified dual-junction cells.

UR - http://www.scopus.com/inward/record.url?scp=84949562419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949562419&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2000.916133

DO - 10.1109/PVSC.2000.916133

M3 - Conference contribution

SN - 0780357728

VL - 2000-January

SP - 1316

EP - 1319

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -