The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

Daniel Adams, B. A. Julies, J. W. Mayer, Terry Alford

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

Original languageEnglish (US)
Pages (from-to)163-168
Number of pages6
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
StatePublished - Jun 30 2003

Keywords

  • Agglomeration
  • Electronegativity
  • Gold
  • Oxidation
  • Silicon
  • Silver

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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