The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

Daniel Adams; B. A. Julies; J. W. Mayer; Terry Alford

doi:10.1016/S0169-4332(03)00513-0

The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

Daniel Adams, B. A. Julies, J. W. Mayer, Terry Alford

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

Original language	English (US)
Pages (from-to)	163-168
Number of pages	6
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00513-0
State	Published - Jun 30 2003

Keywords

Agglomeration
Electronegativity
Gold
Oxidation
Silicon
Silver

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/S0169-4332(03)00513-0

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title = "The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems",

abstract = "Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.",

keywords = "Agglomeration, Electronegativity, Gold, Oxidation, Silicon, Silver",

author = "Daniel Adams and Julies, {B. A.} and Mayer, {J. W.} and Terry Alford",

note = "Funding Information: We would like to thank the iThemba LABS in Faure, South Africa (SA) for deposition of the thin films and use of the van de Graaff accelerator for the RBS analysis. The authors acknowledge the financial support from the National Research Foundation (NRF), SA and the National Science Foundation (NSF), USA. ",

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AU - Adams, Daniel

AU - Julies, B. A.

AU - Mayer, J. W.

AU - Alford, Terry

N1 - Funding Information: We would like to thank the iThemba LABS in Faure, South Africa (SA) for deposition of the thin films and use of the van de Graaff accelerator for the RBS analysis. The authors acknowledge the financial support from the National Research Foundation (NRF), SA and the National Science Foundation (NSF), USA.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

AB - Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

KW - Agglomeration

KW - Electronegativity

KW - Gold

KW - Oxidation

KW - Silicon

KW - Silver

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IS - 1-4 SPEC.

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The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

Abstract

Keywords

ASJC Scopus subject areas

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