The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

Daniel Adams, B. A. Julies, J. W. Mayer, Terry Alford

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

Original languageEnglish (US)
Pages (from-to)163-168
Number of pages6
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
StatePublished - Jun 30 2003

Fingerprint

Surface chemistry
Oxides
Metals
Silicon oxides
Silicon
metals
Single crystals
oxides
silicon oxides
Temperature
single crystals
silicon

Keywords

  • Agglomeration
  • Electronegativity
  • Gold
  • Oxidation
  • Silicon
  • Silver

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems. / Adams, Daniel; Julies, B. A.; Mayer, J. W.; Alford, Terry.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 163-168.

Research output: Contribution to journalArticle

Adams, Daniel ; Julies, B. A. ; Mayer, J. W. ; Alford, Terry. / The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems. In: Applied Surface Science. 2003 ; Vol. 216, No. 1-4 SPEC. pp. 163-168.
@article{bc565b7dfbc9422ebb97d2a6a1a5280f,
title = "The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems",
abstract = "Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.",
keywords = "Agglomeration, Electronegativity, Gold, Oxidation, Silicon, Silver",
author = "Daniel Adams and Julies, {B. A.} and Mayer, {J. W.} and Terry Alford",
year = "2003",
month = "6",
day = "30",
doi = "10.1016/S0169-4332(03)00513-0",
language = "English (US)",
volume = "216",
pages = "163--168",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4 SPEC.",

}

TY - JOUR

T1 - The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

AU - Adams, Daniel

AU - Julies, B. A.

AU - Mayer, J. W.

AU - Alford, Terry

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

AB - Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film.

KW - Agglomeration

KW - Electronegativity

KW - Gold

KW - Oxidation

KW - Silicon

KW - Silver

UR - http://www.scopus.com/inward/record.url?scp=0038345980&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038345980&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00513-0

DO - 10.1016/S0169-4332(03)00513-0

M3 - Article

AN - SCOPUS:0038345980

VL - 216

SP - 163

EP - 168

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC.

ER -