The effect of interactions between water and polishing pads on chemical mechanical polishing removal rates

Engineering & Materials Science

• Chemical mechanical polishing 100%
• Polishing 84%
• Elastic moduli 21%
• Hydrogen bonds 17%
• Deionized water 16%
• Molecules 12%
• Integrated circuits 11%
• Infrared radiation 11%
• Oxides 10%
• Polymers 9%
• Substrates 9%
• Experiments 4%

Physics & Astronomy

• polishing 80%
• water 43%
• interactions 30%
• wafers 16%
• penetration 7%
• modulus of elasticity 7%
• disrupting 6%
• conditioning 5%
• hydrogen bonds 4%
• softening 4%
• infrared spectra 4%
• integrated circuits 4%
• elastic properties 3%
• oxides 2%
• polymers 2%
• molecules 2%
• performance 1%

Chemical Compounds

• Polishing 88%
• Surface 15%
• Attenuated Total Reflection 10%
• Hydrogen Bond 5%
• Oxide 5%
• Molecule 3%