The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

G. Mountjoy; Peter Crozier; P. L. Fejes; R. K. Tsui; G. D. Kramer

doi:10.1063/1.119698

The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

G. Mountjoy, Peter Crozier, P. L. Fejes, R. K. Tsui, G. D. Kramer

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4 Scopus citations

Abstract

We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)_x(InAl)_1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale.

Original language	English (US)
Pages (from-to)	950-952
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	7
DOIs	https://doi.org/10.1063/1.119698
State	Published - Aug 18 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale",

abstract = "We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 {\AA} layers of InGaAs separated by 20 {\AA} of InAlAs. For this (InGa)x(InAl)1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale.",

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T1 - The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

AU - Mountjoy, G.

AU - Crozier, Peter

AU - Fejes, P. L.

AU - Tsui, R. K.

AU - Kramer, G. D.

PY - 1997/8/18

Y1 - 1997/8/18

N2 - We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale.

AB - We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale.

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The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

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