The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale

G. Mountjoy, Peter Crozier, P. L. Fejes, R. K. Tsui, G. D. Kramer

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Abstract

We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1-xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale.

Original languageEnglish (US)
Pages (from-to)950-952
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number7
DOIs
StatePublished - Aug 18 1997

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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