The 1/f noise characteristics of a Schottky Junction Transistor: An ultra-low power, radiation hardened sub-threshold MESFET

R. J. Anderson, J. Spann, J. Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from 2 (Am gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics.

Original languageEnglish (US)
Title of host publicationIEEE Aerospace Conference Proceedings
Pages2431-2435
Number of pages5
Volume4
DOIs
StatePublished - 2004
Event2004 IEEE Aerospace Conference Proceedings - Big Sky, MT, United States
Duration: Mar 6 2004Mar 13 2004

Other

Other2004 IEEE Aerospace Conference Proceedings
CountryUnited States
CityBig Sky, MT
Period3/6/043/13/04

ASJC Scopus subject areas

  • Aerospace Engineering

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