The 1/f noise characteristics of a Schottky Junction Transistor: An ultra-low power, radiation hardened sub-threshold MESFET

R. J. Anderson; J. Spann; J. Yang; Trevor Thornton

doi:10.1109/AERO.2004.4620172

The 1/f noise characteristics of a Schottky Junction Transistor: An ultra-low power, radiation hardened sub-threshold MESFET

R. J. Anderson, J. Spann, J. Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from 2 (Am gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics.

Original language	English (US)
Title of host publication	IEEE Aerospace Conference Proceedings
Pages	2431-2435
Number of pages	5
Volume	4
DOIs	https://doi.org/10.1109/AERO.2004.4620172
State	Published - 2004
Event	2004 IEEE Aerospace Conference Proceedings - Big Sky, MT, United States Duration: Mar 6 2004 → Mar 13 2004

Other

Other	2004 IEEE Aerospace Conference Proceedings
Country/Territory	United States
City	Big Sky, MT
Period	3/6/04 → 3/13/04

ASJC Scopus subject areas

Aerospace Engineering

Access to Document

10.1109/AERO.2004.4620172

Cite this

@inproceedings{20100829cf8c42b9ab844e0353f26e1f,

title = "The 1/f noise characteristics of a Schottky Junction Transistor: An ultra-low power, radiation hardened sub-threshold MESFET",

abstract = "This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from 2 (Am gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics.",

author = "Anderson, {R. J.} and J. Spann and J. Yang and Trevor Thornton",

year = "2004",

doi = "10.1109/AERO.2004.4620172",

language = "English (US)",

volume = "4",

pages = "2431--2435",

booktitle = "IEEE Aerospace Conference Proceedings",

note = "2004 IEEE Aerospace Conference Proceedings ; Conference date: 06-03-2004 Through 13-03-2004",

}

TY - GEN

T1 - The 1/f noise characteristics of a Schottky Junction Transistor

T2 - 2004 IEEE Aerospace Conference Proceedings

AU - Anderson, R. J.

AU - Spann, J.

AU - Yang, J.

AU - Thornton, Trevor

PY - 2004

Y1 - 2004

N2 - This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from 2 (Am gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics.

AB - This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from 2 (Am gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics.

UR - http://www.scopus.com/inward/record.url?scp=11244258370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11244258370&partnerID=8YFLogxK

U2 - 10.1109/AERO.2004.4620172

DO - 10.1109/AERO.2004.4620172

M3 - Conference contribution

AN - SCOPUS:11244258370

VL - 4

SP - 2431

EP - 2435

BT - IEEE Aerospace Conference Proceedings

Y2 - 6 March 2004 through 13 March 2004

ER -

The 1/f noise characteristics of a Schottky Junction Transistor: An ultra-low power, radiation hardened sub-threshold MESFET

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this