Test structures for analyzing radiation effects in bipolar technologies

Hugh Barnaby, R. D. Schrimpf, K. F. Galloway, D. R. Ball, R. L. Pease, Pascal Fouillat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate term inals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Microelectronic Test Structures
Pages197-201
Number of pages5
StatePublished - 2002
Externally publishedYes
EventProceedings of The 2002 International Conference on Microelectronic Test Structures - Cork, Ireland
Duration: Apr 8 2002Apr 11 2002

Other

OtherProceedings of The 2002 International Conference on Microelectronic Test Structures
CountryIreland
CityCork
Period4/8/024/11/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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