Abstract
Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate term inals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE International Conference on Microelectronic Test Structures |
| Pages | 197-201 |
| Number of pages | 5 |
| State | Published - 2002 |
| Externally published | Yes |
| Event | Proceedings of The 2002 International Conference on Microelectronic Test Structures - Cork, Ireland Duration: Apr 8 2002 → Apr 11 2002 |
Other
| Other | Proceedings of The 2002 International Conference on Microelectronic Test Structures |
|---|---|
| Country/Territory | Ireland |
| City | Cork |
| Period | 4/8/02 → 4/11/02 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering