Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys

Sampriti Bagchi, Christian D. Poweleit, Richard T. Beeler, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

Original languageEnglish (US)
Article number193201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number19
DOIs
StatePublished - Nov 2 2011

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Raman scattering
Raman spectra
temperature dependence
decay
conservation
perturbation
Temperature
shift
Conservation
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys. / Bagchi, Sampriti; Poweleit, Christian D.; Beeler, Richard T.; Kouvetakis, John; Menendez, Jose.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 19, 193201, 02.11.2011.

Research output: Contribution to journalArticle

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