The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 2 2011|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics