Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys

Sampriti Bagchi; Christian D. Poweleit; Richard T. Beeler; John Kouvetakis; Jose Menendez

doi:10.1103/PhysRevB.84.193201

Temperature dependence of the Raman spectrum in Ge_1-ySn _y and Ge_1-x-ySi_xSn_y alloys

Sampriti Bagchi, Christian D. Poweleit, Richard T. Beeler, John Kouvetakis, Jose Menendez

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The temperature dependence of the Raman spectrum of Ge-rich Ge _1-ySn_y and Ge_1-x-ySi_xSn_y alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

Original language	English (US)
Article number	193201
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.84.193201
State	Published - Nov 2 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.",

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AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2011/11/2

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N2 - The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

AB - The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

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Temperature dependence of the Raman spectrum in Ge_1-ySn _y and Ge_1-x-ySi_xSn_y alloys

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