Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys

Sampriti Bagchi, Christian D. Poweleit, Richard T. Beeler, John Kouvetakis, Jose Menendez

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The temperature dependence of the Raman spectrum of Ge-rich Ge 1-ySny and Ge1-x-ySixSny alloys has been determined in the 10- to 400-K range. The Raman line shift and width changes as a function of temperature are found to be virtually identical to those observed in bulk Ge. This result shows that the anharmonic decay process responsible for the temperature dependence is extremely robust against the alloy perturbation, so that the expected relaxation of the wave vector conservation rule does not affect the decay in any noticeable way.

Original languageEnglish (US)
Article number193201
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - Nov 2 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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