Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Nathaniel A. Riordan, Chaturvedi Gogineni, Shane Johnson, Xianfeng Lu, Tom Tiedje, Ding Ding, Yong-Hang Zhang, Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz, Stephan W. Koch

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

Original languageEnglish (US)
Pages (from-to)1799-1804
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume23
Issue number10
DOIs
StatePublished - Oct 2012

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Molecular beam epitaxy
Photoluminescence
Pumps
pumps
photoluminescence
Temperature
Semiconductor quantum wells
Energy gap
coverings
molecular beam epitaxy
alignment
quantum wells
temperature
gallium arsenide
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs. / Riordan, Nathaniel A.; Gogineni, Chaturvedi; Johnson, Shane; Lu, Xianfeng; Tiedje, Tom; Ding, Ding; Zhang, Yong-Hang; Fritz, Rafael; Kolata, Kolja; Chatterjee, Sangam; Volz, Kerstin; Koch, Stephan W.

In: Journal of Materials Science: Materials in Electronics, Vol. 23, No. 10, 10.2012, p. 1799-1804.

Research output: Contribution to journalArticle

Riordan, NA, Gogineni, C, Johnson, S, Lu, X, Tiedje, T, Ding, D, Zhang, Y-H, Fritz, R, Kolata, K, Chatterjee, S, Volz, K & Koch, SW 2012, 'Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs', Journal of Materials Science: Materials in Electronics, vol. 23, no. 10, pp. 1799-1804. https://doi.org/10.1007/s10854-012-0665-1
Riordan, Nathaniel A. ; Gogineni, Chaturvedi ; Johnson, Shane ; Lu, Xianfeng ; Tiedje, Tom ; Ding, Ding ; Zhang, Yong-Hang ; Fritz, Rafael ; Kolata, Kolja ; Chatterjee, Sangam ; Volz, Kerstin ; Koch, Stephan W. / Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs. In: Journal of Materials Science: Materials in Electronics. 2012 ; Vol. 23, No. 10. pp. 1799-1804.
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AU - Gogineni, Chaturvedi

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AU - Lu, Xianfeng

AU - Tiedje, Tom

AU - Ding, Ding

AU - Zhang, Yong-Hang

AU - Fritz, Rafael

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AU - Chatterjee, Sangam

AU - Volz, Kerstin

AU - Koch, Stephan W.

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