Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Nathaniel A. Riordan, Chaturvedi Gogineni, Shane Johnson, Xianfeng Lu, Tom Tiedje, Ding Ding, Yong-Hang Zhang, Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz, Stephan W. Koch

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

Original languageEnglish (US)
Pages (from-to)1799-1804
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume23
Issue number10
DOIs
StatePublished - Oct 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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