TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

N. D. Theodore, Terry Alford, C. B. Carter, J. W. Mayer, N. W. Cheung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

Original languageEnglish (US)
Pages (from-to)124-131
Number of pages8
JournalApplied Physics A Solids and Surfaces
Volume54
Issue number2
DOIs
StatePublished - Feb 1992
Externally publishedYes

Fingerprint

Silicon
Annealing
Ions
Transmission electron microscopy
damage
dosage
transmission electron microscopy
implantation
Rutherford backscattering spectroscopy
silicon
Ion implantation
Gold
Spectrometry
Precipitates
annealing
Doping (additives)
Crystalline materials
Atoms
Defects
precipitates

Keywords

  • 61.70
  • 61.80
  • 81.40

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)

Cite this

TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon. / Theodore, N. D.; Alford, Terry; Carter, C. B.; Mayer, J. W.; Cheung, N. W.

In: Applied Physics A Solids and Surfaces, Vol. 54, No. 2, 02.1992, p. 124-131.

Research output: Contribution to journalArticle

Theodore, N. D. ; Alford, Terry ; Carter, C. B. ; Mayer, J. W. ; Cheung, N. W. / TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon. In: Applied Physics A Solids and Surfaces. 1992 ; Vol. 54, No. 2. pp. 124-131.
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