TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

N. D. Theodore; T. L. Alford; C. B. Carter; J. W. Mayer; N. W. Cheung

doi:10.1007/BF00323898

TEM analysis of the influence of dose on damage behavior in MeV Au²⁺-implanted silicon

N. D. Theodore, T. L. Alford, C. B. Carter, J. W. Mayer, N. W. Cheung

Research output: Contribution to journal › Article › peer-review

Abstract

Extended lattice damage created by implantation of 3.6 MeV Au²⁺ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au²⁺ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

Original language	English (US)
Pages (from-to)	124-131
Number of pages	8
Journal	Applied Physics A Solids and Surfaces
Volume	54
Issue number	2
DOIs	https://doi.org/10.1007/BF00323898
State	Published - Feb 1 1992
Externally published	Yes

Keywords

61.70
61.80
81.40

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy (miscellaneous)

Access to Document

10.1007/BF00323898

Cite this

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title = "TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon",

abstract = "Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.",

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AU - Alford, T. L.

AU - Carter, C. B.

AU - Mayer, J. W.

AU - Cheung, N. W.

PY - 1992/2/1

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N2 - Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

AB - Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

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