TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

N. D. Theodore, T. L. Alford, C. B. Carter, J. W. Mayer, N. W. Cheung

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

Original languageEnglish (US)
Pages (from-to)124-131
Number of pages8
JournalApplied Physics A Solids and Surfaces
Volume54
Issue number2
DOIs
StatePublished - Feb 1 1992

    Fingerprint

Keywords

  • 61.70
  • 61.80
  • 81.40

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this