Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

J. Kouvetakis; R. Beeler; Jose Menendez

doi:10.1364/iont.2012.ith2a.3

Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

J. Kouvetakis, R. Beeler, Jose Menendez

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Direct-gap photoluminescence and electroluminescence from Ge _1-ySn_y/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si_1-x-yGe_xSn_y photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

Original language	English (US)
DOIs	https://doi.org/10.1364/iont.2012.ith2a.3
State	Published - 2012
Event	Information Optoelectronics, Nanofabrication and Testing, IONT 2012 - Wuhan, China Duration: Nov 1 2012 → Nov 2 2012

Other

Other	Information Optoelectronics, Nanofabrication and Testing, IONT 2012
Country/Territory	China
City	Wuhan
Period	11/1/12 → 11/2/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Chemistry

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10.1364/iont.2012.ith2a.3

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title = "Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD",

abstract = "Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.",

author = "J. Kouvetakis and R. Beeler and Jose Menendez",

year = "2012",

doi = "10.1364/iont.2012.ith2a.3",

language = "English (US)",

note = "Information Optoelectronics, Nanofabrication and Testing, IONT 2012 ; Conference date: 01-11-2012 Through 02-11-2012",

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TY - CONF

T1 - Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

AU - Kouvetakis, J.

AU - Beeler, R.

AU - Menendez, Jose

PY - 2012

Y1 - 2012

N2 - Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

AB - Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

UR - http://www.scopus.com/inward/record.url?scp=85087596534&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85087596534&partnerID=8YFLogxK

U2 - 10.1364/iont.2012.ith2a.3

DO - 10.1364/iont.2012.ith2a.3

M3 - Paper

AN - SCOPUS:85087596534

T2 - Information Optoelectronics, Nanofabrication and Testing, IONT 2012

Y2 - 1 November 2012 through 2 November 2012

ER -

Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

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