Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

Original languageEnglish (US)
DOIs
StatePublished - 2012
EventInformation Optoelectronics, Nanofabrication and Testing, IONT 2012 - Wuhan, China
Duration: Nov 1 2012Nov 2 2012

Other

OtherInformation Optoelectronics, Nanofabrication and Testing, IONT 2012
CountryChina
CityWuhan
Period11/1/1211/2/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Chemistry

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