While numerous investigations of the structure and interface of amorphous SiO 2 thermally grown on Si, theoretical as well as experimental, have been carried out over the years, a definitive picture of this thin gate oxide and its interface remains lacking. We have explored this issue using synchrotron x rays in grazing incidence geometry. In this geometry a fourfold modulation in the first sharp diffraction peak (FSDP) from thin vitreous SiO 2 of 100 and 500 Å thickness can be observed. While the FSDP exhibits a modulation throughout the entire film, this modulation decays away from the interface. Reflectivity measurements were also performed, which reveal an interfacial layer of 3% density increase in the SiO 2 film over the bulk (film) density.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 2005|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics