Switching behavior and forward bias degradation of 700V, 0.2a, β-Ga2O3 vertical geometry rectifiers

Jiancheng Yang, Chaker Fares, Fan Ren, Yen Ting Chen, Yu Te Liao, Chin Wei Chang, Jenshan Lin, Marko Tadjer, David Smith, S. J. Pearton, Akito Kuramata

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the switching recovery characteristics of large area (contact dimension 0.04 × 0.04 cm2) vertical geometry β-Ga2O3 Schottky rectifiers, consisting of Si-doped epitaxial layers on conducting bulk substrates. Devices that were switched from forward current of 0.225 A to reverse off-state voltage of −700 V in an inductive load test circuit showed a recovery time (trr) of 82 ns, with a reverse recovery current (Irr) of 38 mA and dI/dt of −2.28 A. μsec−1. This shows the potential of Ga2O3 rectifiers for power switching applications, provided effective thermal management schemes can be implemented. Devices deliberately tested to failure under forward bias conditions exhibit delamination and cracking of the Ni/Au contact and underlying epitaxial Ga2O3 due to the low thermal conductivity of the Ga2O3. This failure mode is different to that under high reverse breakdown conditions, where pits formed by material failure under the high field generated at the edge of the rectifying contact occurs.

Original languageEnglish (US)
Pages (from-to)Q3028-Q3033
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
StatePublished - Jan 1 2019

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Recovery
Degradation
Geometry
Epitaxial layers
Delamination
Temperature control
Failure modes
Thermal conductivity
Networks (circuits)
Electric potential
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Switching behavior and forward bias degradation of 700V, 0.2a, β-Ga2O3 vertical geometry rectifiers. / Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen Ting; Liao, Yu Te; Chang, Chin Wei; Lin, Jenshan; Tadjer, Marko; Smith, David; Pearton, S. J.; Kuramata, Akito.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 7, 01.01.2019, p. Q3028-Q3033.

Research output: Contribution to journalArticle

Yang, J, Fares, C, Ren, F, Chen, YT, Liao, YT, Chang, CW, Lin, J, Tadjer, M, Smith, D, Pearton, SJ & Kuramata, A 2019, 'Switching behavior and forward bias degradation of 700V, 0.2a, β-Ga2O3 vertical geometry rectifiers', ECS Journal of Solid State Science and Technology, vol. 8, no. 7, pp. Q3028-Q3033. https://doi.org/10.1149/2.0061907jss
Yang, Jiancheng ; Fares, Chaker ; Ren, Fan ; Chen, Yen Ting ; Liao, Yu Te ; Chang, Chin Wei ; Lin, Jenshan ; Tadjer, Marko ; Smith, David ; Pearton, S. J. ; Kuramata, Akito. / Switching behavior and forward bias degradation of 700V, 0.2a, β-Ga2O3 vertical geometry rectifiers. In: ECS Journal of Solid State Science and Technology. 2019 ; Vol. 8, No. 7. pp. Q3028-Q3033.
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AU - Liao, Yu Te

AU - Chang, Chin Wei

AU - Lin, Jenshan

AU - Tadjer, Marko

AU - Smith, David

AU - Pearton, S. J.

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AB - We report the switching recovery characteristics of large area (contact dimension 0.04 × 0.04 cm2) vertical geometry β-Ga2O3 Schottky rectifiers, consisting of Si-doped epitaxial layers on conducting bulk substrates. Devices that were switched from forward current of 0.225 A to reverse off-state voltage of −700 V in an inductive load test circuit showed a recovery time (trr) of 82 ns, with a reverse recovery current (Irr) of 38 mA and dI/dt of −2.28 A. μsec−1. This shows the potential of Ga2O3 rectifiers for power switching applications, provided effective thermal management schemes can be implemented. Devices deliberately tested to failure under forward bias conditions exhibit delamination and cracking of the Ni/Au contact and underlying epitaxial Ga2O3 due to the low thermal conductivity of the Ga2O3. This failure mode is different to that under high reverse breakdown conditions, where pits formed by material failure under the high field generated at the edge of the rectifying contact occurs.

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