Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si: H thin films

U. K. Das, M. Z. Burrows, M. Lu, Stuart Bowden, R. W. Birkmire

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

The structure of hydrogenated silicon (Si:H) films deposited by rf and dc plasma process on Si (100) and (111) wafers is correlated with the surface passivation quality and heterojunction cell performance. Microstructural defects associated with Si H2 bonding and apparent ion bombardment in dc plasmas have little or no adverse effect on passivation or cell properties, while presence of crystallinity in Si:H i layer severely deteriorates surface passivation and cell open circuit voltage (Voc). Excellent surface passivation (lifetime of >1 ms) and high efficiency cells (>18%) with Voc of 694 mV are demonstrated on n -type textured Czochralski wafer using dc plasma process.

Original languageEnglish (US)
Article number063504
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
StatePublished - 2008
Externally publishedYes

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passivity
heterojunctions
wafers
thin films
cells
open circuit voltage
bombardment
crystallinity
life (durability)
defects
silicon
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si : H thin films. / Das, U. K.; Burrows, M. Z.; Lu, M.; Bowden, Stuart; Birkmire, R. W.

In: Applied Physics Letters, Vol. 92, No. 6, 063504, 2008.

Research output: Contribution to journalArticle

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